IRLMS1902TRPBF International Rectifier, IRLMS1902TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRLMS1902TRPBF
• Description: MOSFET N-CH 20V 3.2A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLMS1902TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 15V
• Power - Max: 1.7W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 100 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 3.2 A
• Power Dissipation: 1.7 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 4.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLMS1902PBFTR

4
100
0.1
10
600
500
400
300
200
100
1
0.4
0
1
T = 150 C
V
J
V
SD
0.6
DS
,Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
°
=
=
=
=
0.8
C iss
C oss
C rss
0V,
C
C
C
gs
gd
ds
+ C
+ C
10
T = 25 C
f = 1MHz
gd ,
gd
J
1.0
C
ds
°
V
1.2
SHORTED
GS
= 0 V
1.4
100
100
0.1
10
10
8
6
4
2
0
1
0
1
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
2.2A
V
DS
°
Q , Total Gate Charge (nC)
°
G
2
, Drain-to-Source Voltage (V)
BY R
10
4
DS(on)
FOR TEST CIRCUIT
SEE FIGURE
V
DS
100us
1ms
10ms
www.irf.com
= 16V
6
9
100
8