IRLMS1902TRPBF International Rectifier, IRLMS1902TRPBF Datasheet - Page 4

MOSFET N-CH 20V 3.2A 6-TSOP

IRLMS1902TRPBF

Manufacturer Part Number
IRLMS1902TRPBF
Description
MOSFET N-CH 20V 3.2A 6-TSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLMS1902TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 2.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.2A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 4.5V
Input Capacitance (ciss) @ Vds
300pF @ 15V
Power - Max
1.7W
Mounting Type
Surface Mount
Package / Case
Micro6™(TSOP-6)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
100 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
3.2 A
Power Dissipation
1.7 W
Mounting Style
SMD/SMT
Gate Charge Qg
4.7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLMS1902PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLMS1902TRPBF
Manufacturer:
MAXIM
Quantity:
48
Part Number:
IRLMS1902TRPBF
Manufacturer:
IR
Quantity:
20 000
4
100
0.1
10
600
500
400
300
200
100
1
0.4
0
1
T = 150 C
V
J
V
SD
0.6
DS
,Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
°
=
=
=
=
0.8
C iss
C oss
C rss
0V,
C
C
C
gs
gd
ds
+ C
+ C
10
T = 25 C
f = 1MHz
gd ,
gd
J
1.0
C
ds
°
V
1.2
SHORTED
GS
= 0 V
1.4
100
100
0.1
10
10
8
6
4
2
0
1
0
1
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
2.2A
V
DS
°
Q , Total Gate Charge (nC)
°
G
2
, Drain-to-Source Voltage (V)
BY R
10
4
DS(on)
FOR TEST CIRCUIT
SEE FIGURE
V
DS
100us
1ms
10ms
www.irf.com
= 16V
6
9
100
8

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