BLF6G22LS-100,118 NXP Semiconductors, BLF6G22LS-100,118 Datasheet - Page 3

• Manufacturer Part Number: BLF6G22LS-100,118
• Description: TRANS BASESTATION 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-100,118

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current Rating: 29A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 25W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 29 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061129118; BLF6G22LS-100 /T3; BLF6G22LS-100 /T3

NXP Semiconductors
6. Characteristics
7. Application information
BLF6G22LS-100
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
RF performance at V
class-AB production test circuit.
The BLF6G22LS-100 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol Parameter
V
V
V
I
I
I
g
R
C
Symbol Parameter
P
G
IRL
η
IMD3
ACPR
Dq
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
L(AV)
DS(on)
rs
p
= 25
= 950 mA; P
°
C unless otherwise specified.
average output power
power gain
input return loss
drain efficiency
third-order intermodulation distortion P
adjacent channel power ratio
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Characteristics
Application information
All information provided in this document is subject to legal disclaimers.
L
= 100 W (CW); f = 2170 MHz.
DS
Rev. 3 — 12 November 2010
= 28 V; I
1
= 2112.5 MHz; f
Dq
= 950 mA; T
2
Conditions
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
= 2122.5 MHz; f
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
= 5.25 A
case
= 0 V; I
= 10 V; I
= 28 V; I
= 0 V; V
= V
= 10 V
= 11 V; V
= 10 V; I
= V
= 0 V; V
Conditions
P
P
P
P
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
GS(th)
GS(th)
= 25
D
= 25 W
= 25 W
= 25 W
= 25 W
= 25 W
DS
DS
D
D
D
= 0.5 mA
+ 3.75 V;
DS
+ 3.75 V;
°
C; unless otherwise specified; in a
= 150 mA
= 900 mA
= 7.5 A
= 28 V
= 28 V;
3
= 0 V
BLF6G22LS-100
= 2157.5 MHz; f
Power LDMOS transistor
Min
-
17
-
27.5
-
-
Min
65
1.4
1.76
-
22
-
-
-
-
DS
4
Typ
25
18.2
−9
29
−37
−41
Typ
-
1.9
2.26
-
28
-
11
0.1
2.1
= 28 V;
= 2167.5 MHz;
© NXP B.V. 2010. All rights reserved.
Max
-
-
−7
-
−34.5
−38.5
Max
-
2.4
2.76
5
-
450
-
0.16
-
3 of 12
Unit
W
dB
dB
%
dBc
dBc
Unit
V
V
V
μA
A
nA
S
Ω
pF