BLF6G22LS-100,118 NXP Semiconductors, BLF6G22LS-100,118 Datasheet - Page 4

• Manufacturer Part Number: BLF6G22LS-100,118
• Description: TRANS BASESTATION 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-100,118

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current Rating: 29A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 25W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 29 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061129118; BLF6G22LS-100 /T3; BLF6G22LS-100 /T3

NXP Semiconductors
BLF6G22LS-100
Product data sheet
Fig 2.
(dB)
G
p
20
18
16
14
0
V
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
DS
= 28 V; I
7.2 One-tone CW
7.3 Two-tone CW
G
η
D
p
Dq
60
= 950 mA; f = 2140 MHz (±100 kHz).
Fig 1.
V
One-tone CW power gain and drain efficiency as functions of load power;
typical values
120
DS
= 28 V; I
P
L(PEP)
All information provided in this document is subject to legal disclaimers.
001aah696
(W)
Dq
Rev. 3 — 12 November 2010
(dB)
= 950 mA; f = 2140 MHz.
180
G
p
20
19
18
17
16
15
14
60
40
20
0
(%)
η
0
D
20
G
η
D
p
Fig 3.
40
(dBc)
IMD
−20
−30
−40
−50
−60
−70
60
0
V
Two-tone CW intermodulation distortion as
function of peak envelope load power; typical
values
DS
80
= 28 V; I
100
Dq
60
BLF6G22LS-100
P
= 950 mA; f = 2140 MHz (±100 kHz).
001aah695
120
L
(W)
140
Power LDMOS transistor
60
50
40
30
20
10
0
(%)
η
D
120
P
L(PEP)
IMD3
IMD5
IMD7
© NXP B.V. 2010. All rights reserved.
001aah697
(W)
180
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