N25Q064A13EF640F Micron Technology Inc, N25Q064A13EF640F Datasheet - Page 47

• Manufacturer Part Number: N25Q064A13EF640F
• Manufacturer: Micron Technology Inc

Specifications of N25Q064A13EF640F

• Lead Free Status / Rohs Status: Supplier Unconfirmed

N25Q064 - 3 V
8
HOLD
W/V
DQ0
DQ1
PP
C
S
Memory organization
The memory is organized as:
Each page can be individually programmed: bits are programmed from 1 to 0. The device is
Subsector eraseble, Sector eraseble or Bulk Erasable but not Page Erasable: bits are
erased from 0 to 1.
Figure 9.
8,388,608 bytes (8 bits each)
128 sectors (64 Kbytes each)
2,048 subsectors (4 Kbytes each)
32,768 pages (256 bytes each)
64 OTP bytes located outside the main memory array
Address register
Control logic
and counter
Block diagram
00000h
I/O shift register
256 bytes (page size)
High voltage
generator
X decoder
Micron Technology, Inc., reserves the right to change products or specifications without notice.
data buffer
256 byte
7FFFFFh
000FFh
64 OTP bytes
©2010 Micron Technology, Inc. All rights reserved.
register
Status
Memory organization
AI13722b
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