H5TQ2G63BFR-H9C HYNIX SEMICONDUCTOR, H5TQ2G63BFR-H9C Datasheet - Page 52

• Manufacturer Part Number: H5TQ2G63BFR-H9C
• Description: 58T1898
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5TQ2G63BFR-H9C

• Memory Type: SDRAM
• Memory Configuration: 128M X 16
• Access Time: 13.5ns
• Interface Type: CMOS
• Memory Case Style: FBGA
• No. Of Pins: 96
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 2 Gbit
• Rohs Compliant: Yes

Rev. 0.5 / Aug. 2010
CK
CK
DQ, DM
DQS,
TDQS,
CK
CK
DQ, DM
DQS,
TDQS,
DQS
DQS
TDQS
TDQS
Begin point: Rising edge of CK - CK with
ODT being first registered low
Begin point: Rising edge of CK - CK
defined by the end point of ODTLoff
VRTT_Nom
VRTT_Nom
V
V
SW2
SW2
Definition of tAOFPD
Definition of tAOF
V
V
SW1
SW1
t
End point: Extrapolated point at VRTT_Nom
AOFPD
t
End point: Extrapolated point at VRTT_Nom
T
AOF
T
SW2
SW2
T
T
SW1
SW1
TD_TAOFPD_DEF
VTT
TD_TAOF_DEF
VTT
VSSQ
VSSQ
H5TQ2G63BFR
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