H5TQ2G63BFR-H9C HYNIX SEMICONDUCTOR, H5TQ2G63BFR-H9C Datasheet - Page 86

• Manufacturer Part Number: H5TQ2G63BFR-H9C
• Description: 58T1898
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5TQ2G63BFR-H9C

• Memory Type: SDRAM
• Memory Configuration: 128M X 16
• Access Time: 13.5ns
• Interface Type: CMOS
• Memory Case Style: FBGA
• No. Of Pins: 96
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 2 Gbit
• Rohs Compliant: Yes

Rev. 0.5 / Aug. 2010
Figure 6 - Illustration of tangent line for hold time t
(for ADD/CMD with respect to clock).
Note: Clock and Strobe are drawn
Hold Slew Rate
Rising Signal
on a different time scale.
V
V
V
V
V
V
IL(dc)
IL(ac)
IH(ac)
IH(dc)
REF(dc)
DDQ
DQS
DQS
CK
CK
max
max
min
min
V
SS
=
dc to V
dc to V
region
region
tangent line [V
REF
REF
Hold Slew Rate
Falling Signal
ΔTR
tDS
tIS
tangent
REF(dc)
line
tDH
tIH
DH
- V
(for DQ with respect to strobe) and t
=
IL(dc)
ΔTR
tangent line [V
max]
nominal
line
tIS
IH(dc)
tDS
tangent
ΔTF
line
min - V
tIH
tDH
ΔTF
H5TQ2G63BFR
nominal
REF(dc)
IH
line
]
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