BLF6G13L-250P NXP Semiconductors, BLF6G13L-250P Datasheet - Page 3

• Manufacturer Part Number: BLF6G13L-250P
• Description: 250 W LDMOS power transistor intended for CW applications at a frequency of 1
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
BLF6G13L-250P_6G13LS-250P
Product data sheet
6.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: CW; f = 1.3 GHz; RF performance at V
unless otherwise specified, in a class-AB production test circuit.
The BLF6G13L-250P and BLF6G13LS-250P are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: V
Symbol
R
Symbol Parameter
V
I
I
g
Symbol
V
V
I
R
P
G
RL

DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
L
DS
th(j-c)
DS(on)
p
= 25
in

C; per section unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
Parameter
thermal resistance from junction to case T
Thermal characteristics
DC characteristics
RF characteristics
Parameter
output power
drain-source voltage
power gain
input return loss
drain efficiency
DS
BLF6G13L-250P; BLF6G13LS-250P
All information provided in this document is subject to legal disclaimers.
= 50 V; I
Rev. 3 — 14 October 2011
Dq
= 100 mA; P
L
Conditions
V
V
V
V
V
V
I
D
= 250 W; f = 1.3 GHz.
GS
DS
GS
GS
DS
GS
DS
GS
= 4.75 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
GS(th)
GS(th)
Conditions
case
D
DS
D
D
DS
Conditions
P
P
P
P
= 1.4 mA
+ 3.75 V;
+ 3.75 V;
DS
= 85 C; P
= 235 mA
= 120 mA
L
L
L
L
= 50 V
= 50 V; I
= 250 W
= 250 W
= 250 W
= 250 W
= 0 V
L
Dq
Power LDMOS transistor
= 250 W
= 100 mA; T
Min
100
1.4
-
-
-
-
-
Min Typ Max Unit
250 -
-
15
-
52
© NXP B.V. 2011. All rights reserved.
Typ
-
1.8
-
21
-
1
200
17
56
-
30 20
case
Typ
0.26
-
50
-
-
Max Unit
-
2.4
1.4
-
240 nA
-
-
= 25
3 of 14
Unit
K/W
W
V
dB
dB
%
V
V
A
A
S
m

C;