BLF6G13L-250P NXP Semiconductors, BLF6G13L-250P Datasheet - Page 7

• Manufacturer Part Number: BLF6G13L-250P
• Description: 250 W LDMOS power transistor intended for CW applications at a frequency of 1
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G13L-250P_6G13LS-250P
Product data sheet
Fig 6.
C17
C16
C14
C15
Printed-Circuit Board (PCB): Duroid 4350B; 
thickness copper plating = 35 m.
See
Component layout for application circuit
Table 9
BLF6G13L-250P; BLF6G13LS-250P
SR1
All information provided in this document is subject to legal disclaimers.
C6
C7
C8
C9
for a list of components.
Rev. 3 — 14 October 2011
C5
C12
C13
C4
C10
C11
C3
C2
C1
6.600
2.700
2.800
mm
mm
mm
R1
R2
r
= 3.48; thickness = 0.762 mm;
C40
C20
C42
C21
C39
C44
C22
C41
C43
C45
C38
4.200
4.300
1.500
mm
mm
mm
C32
Power LDMOS transistor
C37
C34 C35
C36
C23
C33
C24
C25
© NXP B.V. 2011. All rights reserved.
C46
C47
001aan872
SR2
C31
C30
C29
C28
C27
C26
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