BLF6G13L-250P NXP Semiconductors, BLF6G13L-250P Datasheet - Page 11

• Manufacturer Part Number: BLF6G13L-250P
• Description: 250 W LDMOS power transistor intended for CW applications at a frequency of 1
• Manufacturer: NXP Semiconductors

NXP Semiconductors
10. Handling information
11. Abbreviations
12. Revision history
Table 11.
BLF6G13L-250P_6G13LS-250P
Product data sheet
CAUTION
Document ID
BLF6G13L-250P_6G13LS-250P v.3
Modifications:
BLF6G13L-250P_6G13LS-250P v.2
BLF6G13L-250P_6G13LS-250P v.1
Revision history
Table 10.
Acronym
CW
LDMOS
LDMOST
MTTF
RF
SMD
VSWR
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Abbreviations
BLF6G13L-250P; BLF6G13LS-250P
Release date
20111014
20110321
20101102
All information provided in this document is subject to legal disclaimers.
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•
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Description
Continuous Wave
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Mean Time To Failure
Radio Frequency
Surface Mount Device
Voltage Standing-Wave Ratio
Table 6 on page
Table 7 on page
Section 8.1 on page
Rev. 3 — 14 October 2011
Data sheet status
Product data sheet
Objective data sheet
Objective data sheet
3: Several values have been updated
3: The minimum value for 
8: This section has been added
Change notice
-
-
-
D
has been updated
Power LDMOS transistor
Supersedes
BLF6G13L-250P_
6G13LS-250P v.2
BLF6G13L-250P_
6G13LS-250P v.1
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© NXP B.V. 2011. All rights reserved.
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