BLF6G13L-250P NXP Semiconductors, BLF6G13L-250P Datasheet - Page 10

• Manufacturer Part Number: BLF6G13L-250P
• Description: 250 W LDMOS power transistor intended for CW applications at a frequency of 1
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Fig 9.
BLF6G13L-250P_6G13LS-250P
Product data sheet
Earless flanged LDMOST ceramic package; 4 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
mm
Unit
SOT1121B
Outline
version
Package outline SOT1121B
(1)
max
nom
max
nom
min
min
0.187
0.136
4.75
3.45
A
H
A
U
0.155
0.145
3.94
3.68
2
b
0.007
0.003
0.18
0.08
IEC
c
20.02
19.61
0.788
0.772
D
1
3
19.96
19.66
0.786
0.774
D
1
BLF6G13L-250P; BLF6G13LS-250P
JEDEC
8.89
0.35
All information provided in this document is subject to legal disclaimers.
e
0.375
0.365
D
U
H
9.53
9.27
D
e
References
1
1
1
E
Rev. 3 — 14 October 2011
0.375
0.365
0
9.53
9.27
E
1
0.045
0.035
b
1.14
0.89
JEITA
F
2
4
scale
19.94
18.92
0.785
0.745
5
H
5
12.83
12.57
0.505
0.495
w
H
3
1
10 mm
0.067
0.057
D
1.70
1.45
Q
w
2
20.70
20.45
0.815
0.805
F
U
1
D
9.91
9.65
0.39
0.38
U
2
0.51
0.02
w
European
projection
2
E
0.25
0.01
Power LDMOS transistor
w
1
3
Q
© NXP B.V. 2011. All rights reserved.
c
Issue date
09-10-12
09-12-14
sot1121b_po
E
SOT1121B
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