BLF6G13L-250P NXP Semiconductors, BLF6G13L-250P Datasheet - Page 6

250 W LDMOS power transistor intended for CW applications at a frequency of 1

BLF6G13L-250P

Manufacturer Part Number
BLF6G13L-250P
Description
250 W LDMOS power transistor intended for CW applications at a frequency of 1
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF6G13L-250P
Manufacturer:
ALTERA
Quantity:
623
NXP Semiconductors
BLF6G13L-250P_6G13LS-250P
Product data sheet
7.4 Circuit information
Table 9.
For application circuit see
[1]
[2]
[3]
Component
C1, C2
C3, C4
C5
C6, C7, C8, C9, C10,
C11, C38, C39
C12, C13
C14, C15, C32, C34
C16, C17
C20, C21, C22, C23
C40, C41
C42, C43, C44, C45
C24
C25
C26, C27, c28, C29,
C30, C31, C33, C35
C36, C37
C46, C47
R1, R2
SR1
SR2
American Technical Ceramics type 800B or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
American Technical Ceramics type 200B or capacitor of same quality.
List of components
BLF6G13L-250P; BLF6G13LS-250P
All information provided in this document is subject to legal disclaimers.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor 0603
COAX
COAX
Rev. 3 — 14 October 2011
Figure
6.
Value
1.9 pF
4.7 pF
10 pF
56 pF
100 pF
1 nF
10 F; 50 V
3.0 pF
2.4 pF
2.7 pF
0.8 pF
0.6 pF
100 pF
20 nF
100 F; 63 V
5.1 
25 
35 
Power LDMOS transistor
[1]
[1]
[1]
[1]
[2]
[2]
[1]
[1]
[1]
[1]
[1]
[1]
[3]
© NXP B.V. 2011. All rights reserved.
Remarks
220 X5R
UT-141C-25-TP
UT-141C-35-TP
6 of 14

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