MT28F322D20 Micron Technology, MT28F322D20 Datasheet

MT28F322D20

Manufacturer Part Number

MT28F322D20

Description

(MT28F322D18 / MT28F322D20) FLASH MEMORY

Manufacturer

Micron Technology

Datasheet

1.MT28F322D20.pdf (44 pages)

Current page: 1 of 44
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FLASH MEMORY

FEATURES

• Flexible dual-bank architecture

• Basic configuration:

• V

• Random access time: 70ns/80ns @ 1.70V V

• Burst Mode read access (MT28F322D20)

• Page Mode read access

• Low power consumption (V

• Enhanced write and erase suspend options

• Dual 64-bit chip protection registers for security

• Cross-compatible command support

• PROGRAM/ERASE cycle

NOTE: 1. Data based on MT28F322D20 device.

2 Meg x 16 Async/Page/Burst Flash Memory

MT28F322D20FH_4.p65 – Rev. 4, Pub. 7/02

– Support for true concurrent operation with zero

– Read bank a during program bank b and vice versa

– Read bank a during erase bank b and vice versa

Seventy-one erasable blocks

– Bank a (8Mb for data storage)

– Bank b (24Mb for program storage)

– 1.70V (MIN), 1.90V (MAX) V

– 1.80V V

– 0.9V (TYP) V

– 12V ±5% (HV) V

– MAX clock rate: 54 MHz (

– Burst latency: 70ns @ 1.80V V

–

– Eight-word page

– Interpage read access: 70ns/80ns @ 1.80V

– Intrapage read access: 30ns @ 1.80V

– Asynchronous READ < 15mA (MAX)

– Standby < 50µA

– Automatic power saving feature (APS)

– ERASE-SUSPEND-to-READ within same bank

– PROGRAM-SUSPEND-to-READ within same bank

– ERASE-SUSPEND-to-PROGRAM within same bank

purposes

– Extended command set

– Common flash interface

– 100,000 WRITE/ERASE cycles per block

latency

(MT28F322D18 only)

compatibility)

ACLK: 17ns @ 1.80V V

, V

2. A “5” in the part mark represents two different

Q (MAX) (MT28F322D20 only)

frequencies: 54 MHz (MT28F322D20) or 52 MHz

(MT28F322D18)

Q, V

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

, V

voltages

Q (MIN); 2.20V V

(in-system PROGRAM/ERASE)

tolerant (factory programming

and 54 MHz

CLK = 18.5ns)

= 2.20V)

, V

and 54 MHz

(MAX)and 2.25V

ASYNC/PAGE/BURST FLASH MEMORY

MT28F322D20

MT28F322D18

Low Voltage, Extended Temperature

0.18µm Process Technology

OPTIONS

• Timing

• Frequency

• Boot Block Configuration

• Package

• Operating Temperature Range

NOTE: See page 7 for Ball Description Table.

70ns access

80ns access

54 MHz

40 MHz

No burst operation

Top

Bottom

58-ball FBGA (8 x 7 ball grid)

Extended (-40ºC to +85ºC)

See page 43 for mechanical drawing.

DQ7

A11

A12

A13

A15

MT28F322D20FH-804 BET

BALL ASSIGNMENT

DQ15

DQ14

A10

A14

58-Ball FBGA

Part Number Example:

WAIT#

DQ13

DQ6

DQ5

A20

ADV#

DQ11

(Ball Down)

DQ4

CLK

A16

Top View

DQ12

DQ10

RST#

WE#

DQ2

DQ3

WP#

DQ1

DQ9

A18

A17

A19

2 MEG x 16

DQ0

DQ8

CE#

MARKING

OE#

None

-70

-80

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