BUZ358 Siemens Semiconductor Group, BUZ358 Datasheet - Page 2

• Manufacturer Part Number: BUZ358
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
• Manufacturer: Siemens Semiconductor Group

Electrical Characteristics, at T
Semiconductor Group
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage
V
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-Source on-resistance
V
GS
GS =
DS
DS
GS
GS
= 1000 V, V
= 800 V, V
= 0 V, I
= 20 V, V
= 10 V, I
V
DS,
I
D
D
= 1 mA
D
= 0.25 mA, T
DS
GS
= 3.2 A
GS
= 0 V
= 0 V, T
= 0 V, T
j
j
= 125 °C
j
= 25 °C
= 25 °C
j
= 25°C, unless otherwise specified
2
Symbol
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
min.
-
-
-
-
1000
2.1
Values
typ.
-
-
10
10
2.3
3
max.
-
4
1
100
100
2.6
BUZ 358
01/97
Unit
V
µA
nA