BUZ358 Siemens Semiconductor Group, BUZ358 Datasheet - Page 4

• Manufacturer Part Number: BUZ358
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
• Manufacturer: Siemens Semiconductor Group

Electrical Characteristics, at T
Semiconductor Group
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
C
C
GS
R
R
= 25 °C
= 25 °C
= 100 V, I
= 100 V, I
= 0 V, I
F
F =
F =
= 10 A
l
l
S,
S,
d i
d i
F
F
/d t = 100 A/µs
/d t = 100 A/µs
j
= 25°C, unless otherwise specified
Symbol
I
I
V
t
Q
4
S
SM
rr
SD
rr
min.
-
-
-
-
-
Values
typ.
-
-
1
1.5
6.5
max.
-
-
4.5
18
1.2
BUZ 358
01/97
Unit
A
V
µs
µC