BUZ358 Siemens Semiconductor Group, BUZ358 Datasheet - Page 3

• Manufacturer Part Number: BUZ358
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
• Manufacturer: Siemens Semiconductor Group

Electrical Characteristics, at T
Semiconductor Group
Parameter
Dynamic Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
DS
GS
GS
GS
DD
DD
DD
DD
GS
GS
GS
GS
= 0 V, V
= 0 V, V
= 0 V, V
= 30 V, V
= 50
= 30 V, V
= 50
= 30 V, V
= 50
= 30 V, V
= 50
2
*
I
D *
DS
DS
DS
R
GS
GS
GS
GS
DS(on)max,
= 25 V, f = 1 MHz
= 25 V, f = 1 MHz
= 25 V, f = 1 MHz
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
I
D
D
D
D
D
= 3.2 A
= 2.5 A
= 2.5 A
= 2.5 A
= 2.5 A
j
= 25°C, unless otherwise specified
3
Symbol
g
C
C
C
t
t
t
t
d(on)
r
d(off)
f
fs
iss
oss
rss
min.
-
-
-
-
-
-
-
2.5
Values
typ.
5.2
1700
170
80
30
100
400
130
max.
-
2200
300
120
45
160
520
170
BUZ 358
01/97
Unit
S
pF
ns