BUZ358 Siemens Semiconductor Group, BUZ358 Datasheet - Page 5

• Manufacturer Part Number: BUZ358
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
• Manufacturer: Siemens Semiconductor Group

Power dissipation
P
P
Safe operating area
I
parameter: D = 0.01 , T
Semiconductor Group
D
tot
I
tot
D
= ( V
= ( T
10
10
10
10
130
110
100
90
80
70
60
50
40
30
20
10
W
A
-1
0
2
1
0
10
DS
0
C
0
)
)
20
40
10
1
60
C
= 25°C
80
10
2
100
120
DC
V
t
p = 26.0µs
10
T
V
100 µs
1 ms
10 ms
°C
3
C
DS
160
5
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter: D = t
Z
D
thJC
I
th JC
D
= ( T
K/W
10
10
10
10
10
5.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
= ( t
A
-1
-2
-3
1
0
C
10
0
)
-7
p
)
20
GS
10
single pulse
-6
p
40
10 V
/ T
10
-5
60
10
-4
80
10
100
-3
10
120
-2
BUZ 358
D = 0.50
01/97
10
T
t
°C
0.20
0.10
0.05
0.02
0.01
p
C
-1
s
160
10
0