BUZ358 Siemens Semiconductor Group, BUZ358 Datasheet - Page 6

• Manufacturer Part Number: BUZ358
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
• Manufacturer: Siemens Semiconductor Group

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
V
Semiconductor Group
D
I
I
D
D
DS
=
2 x I
6.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
10
A
A
8
7
6
5
4
3
2
1
0
DS
0
0
P
)
D
tot
1
p
x R
= 125W
p
10
= 80 µs
= 80 µs
2
DS(on)max
20
3
l
k
j
i
h
g
4
f
30
e
5
6
40
D
d
= f ( V
7
50
8
c
a
GS
b
V
V GS [V]
V
DS
a
b
c
d
e
f
g
h
i
j
k 10.0
l
V
GS
)
V
20.0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
65
10
6
Typ. drain-source on-resistance
R
parameter: t
R
Typ. forward transconductance g
parameter: t
V
g
DS (on)
DS (on)
DS
fs
2 x I
8.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
7.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
S
0.0
0.0
=
V
V
GS
GS
4.0
4.5
D
a
a
I
p
0.5
[V] =
[V] =
1.0
x R
D
p
5.0
b
= 80 µs, T
)
= 80 µs,
DS(on)max
5.5
c
1.0
2.0
6.0
d
1.5
3.0
6.5
e
j
= 25 °C
7.0
2.0
f
4.0
a
7.5
g
2.5
5.0
8.0
h
9.0
fs
3.0
i
BUZ 358
6.0
01/97
= f
10.0
j
I
D
I
A
D
b
( I
A
20.0
k
D
k
i
e
g
c
h
)
f
7.5
4.0
j
d