BUZ358 Siemens Semiconductor Group, BUZ358 Datasheet - Page 8

• Manufacturer Part Number: BUZ358
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
• Manufacturer: Siemens Semiconductor Group

Avalanche energy E
parameter: I
R
Drain-source breakdown voltage
V
V
Semiconductor Group
(BR)DSS
E
(BR)DSS
GS
AS
1200
1160
1140
1120
1100
1080
1060
1040
1020
1000
= 25 , L = 62 mH
900
700
600
500
400
300
200
100
980
960
940
920
900
mJ
V
0
-60
20
= ( T
D
40
= 5.1 A, V
-20
j
)
60
20
AS
80
DD
= ( T
= 50 V
60
100
j
)
120
100
°C
T
T
°C
j
j
160
160
8
Typ. gate charge
V
parameter: I
V
GS
GS
= ( Q
16
12
10
V
8
6
4
2
0
0
Gate
20
D puls
)
40
= 8 A
0,2
60
V
DS max
80 100 120 140 160 nC 200
BUZ 358
0,8
01/97
V
Q
DS max
Gate