s908ey8ad4cfjer Freescale Semiconductor, Inc, s908ey8ad4cfjer Datasheet - Page 39

• Manufacturer Part Number: s908ey8ad4cfjer
• Description: M68hc08 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

2.6.4 FLASH Program/Read Operation
Programming of the FLASH memory is done on a row basis. A row consists of 32 consecutive bytes
starting from addresses $XX00, $XX20, $XX40, $XX60, $XX80, $XXA0, $XXC0, and $XXE0. Use this
step-by-step procedure to program a row of FLASH memory
This program sequence is repeated throughout the memory until all data is programmed.
1. The time between each FLASH address change, or the time between the last FLASH address programmed to clearing the
Freescale Semiconductor
10. Clear the PGM bit.
11. Wait for a time, t
12. Clear the HVEN bit.
13. After a time, t
PGM bit, must not exceed the maximum programming time, t
1. Set the PGM bit. This configures the memory for program operation and enables the latching of
2. Read from the FLASH block protect register.
3. Write any data to any FLASH address within the row address range desired.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Write data to the FLASH address
8. Wait for a time, t
9. Repeat steps 7 and 8 until all the bytes within the row are programmed.
address and data for programming.
To avoid program disturbs, the row must be erased before any byte on that
row is programmed.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps. Do not exceed t
RCV
NVS
PGS
PROG
NVH
(minimum of 1 µs), the memory can be accessed in read mode again.
(1)
(minimum of 10 µs).
(minimum of 5 µs).
(minimum of 5 µs).
MC68HC908EY16 • MC68HC908EY8 Data Sheet, Rev. 10
(minimum of 30 µs).
(1)
to be programmed.
NOTE
NOTE
PROG
PROG
maximum.
(Figure 2-4
maximum.
is a flowchart representation).
FLASH Memory (FLASH)
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