lh28f160s5h-l Sharp Microelectronics of the Americas, lh28f160s5h-l Datasheet - Page 37

• Manufacturer Part Number: lh28f160s5h-l
• Description: M-bit Smart Flash Memories Fast Programming
• Manufacturer: Sharp Microelectronics of the Americas

6.2.3 DC CHARACTERISTICS
SYMBOL
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
LI
LO
CCS
CCD
CCR
CCW
CCE
CCWS
CCES
PPS
PPR
PPD
PPW
PPE
PPWS
PPES
Input Load Current
Output Leakage Current
V
V
Down Current
V
V
((Multi) W/B Write or Set Block Lock-Bit)
V
(Block Erase, Full Chip Erase,
Clear Block Lock-Bits)
V
Current
V
V
V
V
((Multi) W/B Write or Set Block Lock-Bit)
V
(Block Erase, Full Chip Erase,
Clear Block Lock-Bits)
V
Current
CC
CC
CC
CC
CC
CC
PP
PP
PP
PP
PP
PP
Standby Current
Read Current
Deep Power-Down Current
Write Current
Erase Current
Write or Block Erase Suspend
Standby Current
Deep Power-
Read Current
Write Current
Erase Current
Write or Block Erase Suspend
PARAMETER
LH28F160S5-L
LH28F160S5H-L
1, 3, 6
1, 5, 6
NOTE
1, 7
1, 7
1, 2
1, 7
1, 7
1
1
1
1
1
1
1
- 37 -
TYP.
V
0.1
25
±2
10
10
CC =
2
1
5.0±0.5 V
MAX.
±10
100
±15
200
200
±1
15
20
50
65
35
30
10
80
40
4
5
UNIT
mA V
mA
mA
mA V
mA V
mA CE# = V
mA V
mA V
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
CMOS Inputs
V
CE# = RP# = V
TTL Inputs
CE# = RP# = V
RP# = GND±0.2 V
I
CMOS Inputs
V
CE# = GND
f = 8 MHz, I
TTL Inputs
V
CE# = V
f = 8 MHz, I
V
V
RP# = GND±0.2 V
V
OUT
CC
IN
CC
OUT
CC
CC
CC
CC
PP
PP
PP
PP
PP
PP
PP
= V
= 5.0±0.5 V
= 5.0±0.5 V
≤ V
> V
= 5.0±0.5 V
= 5.0±0.5V
= V
= V
= V
= V
= V
= V
= V
(STS) = 0 mA
LH28F160S5-L/S5H-L
= V
CC
CC
CC
PPH1
CC
CC
CC
CC
CC
CC
IL
IH
CONDITIONS
CC
or GND
Max.
Max.
Max.
Max.
Max.
Max.
OUT
OUT
or GND
TEST
CC
IH
= 0 mA
= 0 mA
±0.2 V