tmp86fh09amg TOSHIBA Semiconductor CORPORATION, tmp86fh09amg Datasheet - Page 144

• Manufacturer Part Number: tmp86fh09amg
• Description: 8 Bit Microcontroller Tlcs-870/c Series
• Manufacturer: TOSHIBA Semiconductor CORPORATION

14.2
Command Sequence
Table 14-1 Command Sequence
14.2
1
2
3
4
5
6
14.2.1
14.2.2
Command Sequence
Security Program
Product ID Entry
(4-kbyte Erase)
Product ID Exit
Product ID Exit
ble), as shown in Table 14-1. Addresses specified in the command sequence are recognized with the lower 12 bits
(excluding BA, SA, and FF7FH used for security program). The upper 4 bits are used to specify the flash memo-
ry area,
Byte program
Sector Erase
Chip Erase
(All Erase)
The command sequence in the MCU and the serial PROM modes consists of six commands (JEDEC compati-
Note 1: Set the address and data to be written.
Note 2: The area to be erased is specified with the upper 4 bits of the address.
Command Sequence
fied in the 4th bus write cycle. Each byte can be programmed in a maximum of 40 μs. The next command se-
quence cannot be executed until the write operation is completed. To check the completion of the write opera-
tion, perform read operations repeatedly until the same data is read twice from the same address in the flash
memory. During the write operation, any consecutive attempts to read from the same address is reversed bit
6 of the data (toggling between 0 and 1).
fied by the upper 4 bits of the 6th bus write cycle address. For example, to erase 4 kbytes from F000H to
FFFFH, specify one of the addresses in F000H-FFFFH as the 6th bus write cycle. The sector erase command
is effective only in the MCU and serial PROM modes, and it cannot be used in the parallel PROM mode.
the erase operation is completed. To check the completion of the erase operation, perform read operations re-
peatedly for data polling until the same data is read twice from the same address in the flash memory. Dur-
ing the erase operation, any consecutive attempts to read from the same address is reversed bit 6 of the data
(toggling between 0 and 1).
This command writes the flash memory for each byte unit. The addresses and data to be written are speci-
This command erases the flash memory in units of 4 kbytes. The flash memory area to be erased is speci-
A maximum of 30 ms is required to erase 4 kbytes. The next command sequence cannot be executed until
Byte Program
Sector Erase (4-kbyte Erase)
Note:To rewrite data to Flash memory addresses at which data (including FFH) is already written, make
sure to erase the existing data by "sector erase" or "chip erase" before rewriting data.
1st Bus Write Cycle
Address
555H
555H
555H
555H
555H
555H
XXH
Data
AAH
AAH
AAH
AAH
AAH
AAH
F0H
Address
2nd Bus Write Cy-
AAAH
AAAH
AAAH
AAAH
AAAH
AAAH
-
cle
Data
55H
55H
55H
55H
55H
55H
-
3rd Bus Write Cycle 4th Bus Write Cycle 5th Bus Write Cycle 6th Bus Write Cycle
Address
Page 134
555H
555H
555H
555H
555H
555H
-
Data
A0H
80H
80H
90H
F0H
A5H
-
Address
(Note 1)
FF7FH
555H
555H
BA
-
-
-
(Note 1)
Data
Data
AAH
AAH
00H
-
-
-
Address
AAAH
AAAH
-
-
-
-
-
TMP86FH09AMG
Data
55H
55H
-
-
-
-
-
(Note 2)
Address
555H
SA
-
-
-
-
-
Data
30H
10H
-
-
-
-
-