MC9S08GT16 MOTOROLA [Motorola, Inc], MC9S08GT16 Datasheet - Page 49

• Manufacturer Part Number: MC9S08GT16
• Description: Microcontrollers
• Manufacturer: MOTOROLA [Motorola, Inc]

4.4.4
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the FLASH
array does not need to be disabled between program operations. Ordinarily, when a program or erase
command is issued, an internal charge pump associated with the FLASH memory must be enabled to
supply high voltage to the array. Upon completion of the command, the charge pump is turned off. When
a burst program command is issued, the charge pump is enabled and then remains enabled after completion
of the burst program operation if the following two conditions are met:
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
Freescale Semiconductor
1. The next burst program command has been queued before the current program operation has
2. The next sequential address selects a byte on the same physical row as the current byte being
completed.
programmed. A row of FLASH memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.
Burst Program Execution
Figure 4-2. FLASH Program and Erase Flowchart
0
TO BUFFER ADDRESS AND DATA
WRITE COMMAND TO FCMD
MC9S08GB/GT Data Sheet, Rev. 2.3
TO LAUNCH COMMAND
AND CLEAR FCBEF
WRITE TO FCDIV
WRITE 1 TO FCBEF
WRITE TO FLASH
CLEAR ERROR
FACCERR ?
FACCERR ?
FPVIO OR
START
FCCF ?
DONE
1
NO
(1)
(2)
0
YES
(2)
checking FCBEF or FCCF.
Wait at least four bus cycles before
(1)
ERROR EXIT
after reset.
Only required once
FLASH
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