RG82845M Intel, RG82845M Datasheet - Page 127

• Manufacturer Part Number: RG82845M
• Description: Chipset Memory Controller Hub Mobile
• Manufacturer: Intel

6.3.
250687-002
Table 36. Power Characteristics
R
Power Characteristics
NOTES:
TDP
I
I
I
I
I
I
I
I
I
I
VTT
VCC1_5_CORE
VCC1_5_AGP
VCC1_8
VCCSM
SUS_VCCSM
SDREF
SUS_SDREF
TTRC
SUS_TTRC
Symbol
1. This spec is the Thermal Design Power and it is the estimated maximum possible expected power generated in
2. Pre-silicon specs have a +20% / -10% tolerance.
3. These current levels can happen simultaneously, and can be summed into one supply.
a component by a realistic application. It is based on extrapolations in both hardware and software technology
over the life of the component. It does not represent the expected power generated by a power virus. Studies
by Intel indicate that no application will cause thermally significant power dissipation exceeding this
specification, although it is possible to concoct higher power synthetic workloads that write but never read.
Under realistic read/write conditions, this higher power workload can only be transient, and is accounted in the
Icc (Max) spec.
Thermal Design Power
Intel 845MP/845MZ Chipset MCH-M
VTT supply Current
1.5 V Core Supply Current
1.5 V AGP Supply Current
1.8 V Hub Interface Supply Current
DDR System Memory Interface (2.5
V) Supply Current
DDR System Memory Interface (2.5
V) Standby Supply Current
DDR System Memory Interface
Reference Voltage (1.25 V) Supply
Current
DDR System Memory Interface
Reference Voltage (1.25 V) Standby
Supply Current
DDR System Memory Interface
Resister Compensation Voltage (1.25
V) Supply Current
DDR System Memory Interface
Resister Compensation Voltage (1.25
V) Standby Supply Current
Parameter
Datasheet
Intel
Min
®
82845MP/82845MZ Chipset-Mobile (MCH-M)
Typ
4.6
Max
0.37
0.20
2.4
1.9
1.9
25
10
40
1
0
Unit
mA
mA
mA
mA
mA
W
A
A
A
A
A
Notes
2,3
2,3
1
2
2
2
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