CY7C1370D-200BGXC Cypress Semiconductor Corp, CY7C1370D-200BGXC Datasheet - Page 18

• Manufacturer Part Number: CY7C1370D-200BGXC
• Description: IC SRAM 18MBIT 200MHZ 119BGA
• Manufacturer: Cypress Semiconductor Corp
• Type: Synchronousr

Specifications of CY7C1370D-200BGXC

• Memory Size: 18M (512K x 36)
• Package / Case: 119-BGA
• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: 3 ns
• Maximum Clock Frequency: 200 MHz
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3.135 V
• Maximum Operating Current: 300 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Number Of Ports: 4
• Operating Supply Voltage: 3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage on V
Supply voltage on V
DC to outputs in tri-state ....................–0.5 V to V
Electrical Characteristics
Over the Operating Range
Document Number: 38-05558 Rev. *H
V
V
V
V
V
V
I
I
I
I
I
I
I
Notes
X
OZ
DD
SB1
SB2
SB3
SB4
16. Overshoot: V
17. T
18. Tested initially and after any design or process change that may affect these parameters.
Parameter
DD
DDQ
OH
OL
IH
IL
Power-up
: Assumes a linear ramp from 0 V to V
IH
Power supply voltage
I/O supply voltage
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
except ZZ and MODE
Input current of MODE
Input current of ZZ
Output leakage current GND  V
V
Automatic CE
power-down
current—TTL inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—CMOS Inputs
Automatic CE
power-down
current—TTL Inputs
(AC) < V
DD
operating supply
DD
DDQ
Description
DD
relative to GND ........–0.5 V to +3.6 V
relative to GND....... –0.5 V to +V
+ 1.5 V (Pulse width less than t
[16, 17]
[18]
[18]
for 2.5 V I/O
for 2.5 V I/O, I
for 2.5 V I/O, I
for 2.5 V I/O
for 2.5 V I/O
GND  V
Input = V
Input = V
Input = V
Input = V
V
f = f
Max. V
V
f = f
Max. V
V
f = 0
Max. V
V
f = f
Max. V
V
DD
DD
IN
IN
IN
IN
(min) within 200 ms. During this time V
MAX
 V
MAX
 0.3 V or V
 0.3V or V
MAX
 V
= Max, I
DD
DD
DD
DD
IH
IH
DDQ
= 1/t
= 1/t
= 1/t
CYC
I
SS
DD
SS
DD
I
, device deselected,
, device deselected,
, device deselected,
, device deselected,
or V
or V
 V
 V
/2), undershoot: V
OUT
CYC
CYC
CYC
+ 0.5 V
DDQ
DD,
IN
IN
OH
OL
IN
IN
 V
 V
= 1.0 mA
= 0 mA,
output disabled
= 1.0 mA
DD
> V
> V
IL
IL
Test Conditions
DDQ
DDQ
,
, f = 0
0.3 V,
0.3 V,
IL
(AC) > –2 V (Pulse width less than t
DC input voltage .................................. –0.5 V to V
Current into outputs (LOW) ......................................... 20 mA
Static discharge voltage.......................................... > 2001 V
(per MIL-STD-883, method 3015)
Latch-up current .................................................... > 200 mA
Operating Range
Commercial
Industrial
Range
IH
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
All speed grades
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
All speed grades
< V
DD
and V
–40 °C to +85 °C
DDQ
0 °C to +70 °C
Temperature
< V
Ambient
DD
.
CYC
/2).
2.375
2.375
–0.3
Min
–30
2.0
1.7
–5
–5
–5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
CY7C1370DV25
CY7C1372DV25
V
2.5 V ± 5%
V
DD
DD
2.625
Max
V
350
160
135
300
275
150
140
130
125
0.4
0.7
30
70
80
+ 0.3 V
–
5
–
5
–
5
DD
/V
DDQ
Page 18 of 29
DD
+ 0.5 V
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
A
A
A
A
A
A
V
V
V
V
V
V
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