CY7C1370D-200BGXC Cypress Semiconductor Corp, CY7C1370D-200BGXC Datasheet - Page 14

• Manufacturer Part Number: CY7C1370D-200BGXC
• Description: IC SRAM 18MBIT 200MHZ 119BGA
• Manufacturer: Cypress Semiconductor Corp
• Type: Synchronousr

Specifications of CY7C1370D-200BGXC

• Memory Size: 18M (512K x 36)
• Package / Case: 119-BGA
• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: 3 ns
• Maximum Clock Frequency: 200 MHz
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3.135 V
• Maximum Operating Current: 300 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Number Of Ports: 4
• Operating Supply Voltage: 3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TAP AC Switching Characteristics
Over the Operating Range
Document Number: 38-05558 Rev. *H
Clock
t
t
t
t
Output Times
t
t
Set-up Times
t
t
t
Hold Times
t
t
t
Notes
Parameter
TCYC
TF
TH
TL
TDOV
TDOX
TMSS
TDIS
CS
TMSH
TDIH
CH
9. t
10. Test conditions are specified using the load in TAP AC test Conditions. t
CS
and t
CH
refer to the set-up and hold time requirements of latching data from the boundary scan register.
TCK clock cycle time
TCK clock frequency
TCK clock HIGH time
TCK clock LOW time
TCK clock LOW to TDO valid
TCK clock LOW to TDO invalid
TMS set-up to TCK clock rise
TDI set-up to TCK clock rise
Capture set-up to TCK rise
TMS hold after TCK clock rise
TDI hold after clock rise
Capture hold after clock rise
[9, 10]
Description
R
/t
F
= 1 ns.
Min
50
20
20
–
–
0
5
5
5
5
5
5
CY7C1370DV25
CY7C1372DV25
Max
20
10
–
–
–
–
–
–
–
–
–
–
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Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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