PESD1LIN,115 NXP Semiconductors, PESD1LIN,115 Datasheet - Page 4
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PESD1LIN,115
Manufacturer Part Number
PESD1LIN,115
Description
DIODE ESD PROTECTION SOD323
Manufacturer
NXP Semiconductors
Datasheet
1.PESD1LIN115.pdf
(11 pages)
Specifications of PESD1LIN,115
Package / Case
SC-76, SOD-323, UMD2
Voltage - Reverse Standoff (typ)
15V
Voltage - Breakdown
17.1V
Power (watts)
160W
Polarization
Bidirectional
Mounting Type
Surface Mount
Polarity
Bidirectional
Clamping Voltage
25 V
Operating Voltage
24 V
Breakdown Voltage
18.9 V
Termination Style
SMD/SMT
Peak Surge Current
3 A
Peak Pulse Power Dissipation
160 W
Capacitance
17 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Dimensions
1.35 mm W x 2.7 mm L x 1.1 mm H
Number Of Elements
1
Operating Temperature Classification
Military
Reverse Breakdown Voltage
25.4V
Reverse Stand-off Voltage
24V
Leakage Current (max)
50nA
Peak Pulse Current
3A
Test Current (it)
5mA
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Pin Count
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4033-2
934058897115
PESD1LIN T/R
PESD1LIN T/R
934058897115
PESD1LIN T/R
PESD1LIN T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PESD1LIN,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
6. Characteristics
PESD1LIN_2
Product data sheet
Fig 3.
P
(W)
PP
10
10
10
10
4
3
2
1
T
Peak pulse power as a function of exponential
pulse duration; typical values
amb
= 25 C
10
Table 8.
T
[1]
Symbol
V
I
V
C
V
r
RM
amb
dif
RWM
BR
CL
d
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
10
= 25 C unless otherwise specified.
2
Parameter
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
differential resistance
Characteristics
PESD1LIN (15 V)
PESD1LIN (24 V)
PESD1LIN (15 V)
PESD1LIN (24 V)
PESD1LIN (15 V)
PESD1LIN (24 V)
PESD1LIN (15 V)
PESD1LIN (24 V)
PESD1LIN (15 V)
PESD1LIN (24 V)
10
3
006aaa164
t
p
( s)
Rev. 02 — 12 November 2008
10
4
Conditions
V
V
I
V
I
I
I
I
I
I
Fig 4.
R
PP
PP
PP
PP
R
R
RWM
RWM
R
P
= 5 mA
= 1 mA
= 1 mA
PP(25 C)
= 0 V; f = 1 MHz
= 1 A
= 5 A
= 1 A
= 3 A
P
PP
= 15 V
= 24 V
1.2
0.8
0.4
0
0
Relative variation of peak pulse power as a
function of junction temperature; typical
values
50
[1]
LIN bus ESD protection diode
Min
-
-
-
-
17.1
25.4
-
-
-
-
-
-
-
100
Typ
-
-
< 1
< 1
18.9
27.8
13
-
-
-
-
-
-
PESD1LIN
150
© NXP B.V. 2008. All rights reserved.
001aaa193
T
j
Max
15
24
50
50
20.3
30.3
17
25
44
40
70
225
300
( C)
200
Unit
V
V
nA
nA
V
V
pF
V
V
V
V
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