MC9S08DV60ACLC Freescale Semiconductor, MC9S08DV60ACLC Datasheet - Page 55
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MC9S08DV60ACLC
Manufacturer Part Number
MC9S08DV60ACLC
Description
IC MCU 60K FLASH 3K RAM 32-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Specifications of MC9S08DV60ACLC
Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
CAN, I²C, LIN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
25
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
3K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 10x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
32-LQFP
Processor Series
S08DV
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
3 KB
Interface Type
CAN, I2C, SCI, SPI
Number Of Programmable I/os
26
Operating Supply Voltage
5.5 V
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMO9S08DZ60
On-chip Adc
12 bit, 10 channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC9S08DV60ACLC
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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4.5.4
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the Flash array
does not need to be disabled between program operations. Ordinarily, when a program or erase command
is issued, an internal charge pump associated with the Flash memory must be enabled to supply high
voltage to the array. Upon completion of the command, the charge pump is turned off. When a burst
program command is issued, the charge pump is enabled and remains enabled after completion of the burst
program operation if these two conditions are met:
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
program time provided that the conditions above are met. If the next sequential address is the beginning of
a new row, the program time for that byte will be the standard time instead of the burst time. This is because
the high voltage to the array must be disabled and then enabled again. If a new burst command has not been
queued before the current command completes, then the charge pump will be disabled and high voltage
removed from the array.
A flowchart to execute the burst program operation is shown in
Freescale Semiconductor
•
•
The next burst program command sequence has begun before the FCCF bit is set.
The next sequential address selects a byte on the same burst block as the current byte being
programmed. A burst block in this Flash memory consists of 32 bytes. A new burst block begins
at each 32-byte address boundary.
Burst Program Execution
MC9S08DV60 Series Data Sheet, Rev 3
Figure
4-3.
Chapter 4 Memory
55
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