MC908GR60ACFAE Freescale Semiconductor, MC908GR60ACFAE Datasheet - Page 53

• Manufacturer Part Number: MC908GR60ACFAE
• Description: IC MCU 60K FLASH 8MHZ 48-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908GR60ACFAE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 37
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 24x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LQFP
• Controller Family/series: HC08
• No. Of I/o's: 37
• Ram Memory Size: 2KB
• Cpu Speed: 8MHz
• No. Of Timers: 2
• Embedded Interface Type: SCI, SPI
• Rohs Compliant: Yes
• Processor Series: HC08GR
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 2 KB
• Interface Type: ESCI, SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 53
• Number Of Timers: 8
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, DEMO908GZ60E, M68CBL05CE, M68EML08GPGTE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 24 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

When bits within FL2BPR are programmed (0), they lock a block of memory address ranges as shown in
2.7.2.2 FLASH-2 Block Protect
protected block of FLASH memory can not be erased or programmed.
2.7.4 FLASH-2 Mass Erase Operation
Use this step-by-step procedure to erase the entire FLASH-2 memory:
A. Programming and erasing of FLASH locations can not be performed by code being executed from the
B. While these operations must be performed in the order shown, other unrelated operations may occur
C. It is highly recommended that interrupts be disabled during program/erase operations.
Freescale Semiconductor
10. Wait for a time, t
1. Set both the ERASE bit and the MASS bit in the FLASH-2 control register (FL2CR).
2. Read the FLASH-2 block protect register (FL2BPR).
3. Write to any FLASH-2 address within the FLASH-2 array with any data.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE and MASS bits.
8. Wait for a time, t
9. Clear the HVEN bit.
same FLASH array.
between the steps. However, care must be taken to ensure that these operations do not access any
address within the FLASH array memory space such as the COP control register (COPCTL) at
$FFFF.
The vector locations and the FLASH block protect registers are located in
the same page. FL1BPR and FL2BPR are not protected with special
hardware or software. Therefore, if this page is not protected by FL1BPR
and the vector locations are erased by either a page or a mass erase
operation, both FL1BPR and FL2BPR will also get erased.
Mass erase is disabled whenever any block is protected (FL2BPR does not
equal $FF).
MC68HC908GR60A • MC68HC908GR48A • MC68HC908GR32A Data Sheet, Rev. 5
RCV
NVS
MERASE
NVHL
, (typically 1 μs) after which the memory can be accessed in normal read mode.
(minimum 10 μs).
(minimum 100 μs).
Register. If FL2BPR is programmed with any value other than $FF, the
(minimum 4 ms).
NOTE
NOTE
NOTE
FLASH-2 Memory (FLASH-2)
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