MC9S08GT16ACFDE Freescale Semiconductor, MC9S08GT16ACFDE Datasheet - Page 262

• Manufacturer Part Number: MC9S08GT16ACFDE
• Description: IC MCU 16K FLASH 2K RAM 48-QFN
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08GT16ACFDE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 39
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-QFN
• Cpu Family: HCS08
• Device Core Size: 8b
• Frequency (max): 40MHz
• Interface Type: I2C/SCI/SPI
• Total Internal Ram Size: 2KB
• # I/os (max): 39
• Operating Supply Voltage (typ): 2.5/3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 1.8V
• On-chip Adc: 8-chx10-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 48
• Package Type: QFN EP
• Processor Series: S08GT
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 2 KB
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 39
• Operating Supply Voltage: 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: M68EVB908GB60E, M68DEMO908GB60E
• Minimum Operating Temperature: - 40 C
• For Use With: M68DEMO908GB60E - BOARD DEMO MC9S08GB60M68EVB908GB60E - BOARD EVAL FOR MC9S08GB60
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics
A.5
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions should be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the Human Body
Model (HBM), the Machine Model (MM) and the Charge Device Model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification
A.6
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
262
Human Body
Machine
Charge Device
Model
Latch-Up
Electrostatic Discharge (ESD) Protection Characteristics
DC Characteristics
Model
Supply Voltage
Temperature
Series Resistance
Storage Capacitance
Number of Pulse per pin
Series Resistance
Storage Capacitance
Number of Pulse per pin
Series Resistance
Storage Capacitance
Number of Pulse per pin
Minimum input voltage limit
Maximum input voltage limit
Characteristic
Table A-4. ESD and Latch-up Test Conditions
Table A-5. MCU Operating Conditions
MC9S08GT16A/GT8A Data Sheet, Rev. 1
Description
M
C
Min
–40
–40
1.8
Typ
—
—
—
Symbol
R1
R1
R1
—
—
—
C
C
C
Max
125
3.6
85
Value
1500
–2.5
100
200
7.5
3
0
3
Freescale Semiconductor
Unit
°C
V
Unit
pF
pF
pF
Ω
Ω
Ω
V
V