MC9S08GT16ACFDE Freescale Semiconductor, MC9S08GT16ACFDE Datasheet - Page 50
![IC MCU 16K FLASH 2K RAM 48-QFN](/photos/12/16/121644/mc9s08gt16a_sml.jpg)
MC9S08GT16ACFDE
Manufacturer Part Number
MC9S08GT16ACFDE
Description
IC MCU 16K FLASH 2K RAM 48-QFN
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet
1.MC9S08GT8ACFBER.pdf
(300 pages)
Specifications of MC9S08GT16ACFDE
Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
39
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-QFN
Cpu Family
HCS08
Device Core Size
8b
Frequency (max)
40MHz
Interface Type
I2C/SCI/SPI
Total Internal Ram Size
2KB
# I/os (max)
39
Operating Supply Voltage (typ)
2.5/3.3V
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
1.8V
On-chip Adc
8-chx10-bit
Instruction Set Architecture
CISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
48
Package Type
QFN EP
Processor Series
S08GT
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
2 KB
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
39
Operating Supply Voltage
3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
M68EVB908GB60E, M68DEMO908GB60E
Minimum Operating Temperature
- 40 C
For Use With
M68DEMO908GB60E - BOARD DEMO MC9S08GB60M68EVB908GB60E - BOARD EVAL FOR MC9S08GB60
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Compliant
- Current page: 50 of 300
- Download datasheet (2Mb)
Memory
A partial command sequence can be aborted manually by writing a 0 to FCBEF any time after the write to
the memory array and before writing the 1 that clears FCBEF and launches the complete command.
Aborting a command in this way sets the FACCERR access error flag which must be cleared before
starting a new command.
A strictly monitored procedure must be adhered to, or the command will not be accepted. This minimizes
the possibility of any unintended change to the FLASH memory contents. The command complete flag
(FCCF) indicates when a command is complete. The command sequence must be completed by clearing
FCBEF to launch the command.
burst programming. The FCDIV register must be initialized before using any FLASH commands. This
must be done only once following a reset.
50
2. Write the command code for the desired command to FCMD. The five valid commands are blank
3. Write a 1 to the FCBEF bit in FSTAT to clear FCBEF and launch the command (including its
check (0x05), byte program (0x20), burst program (0x25), page erase (0x40), and mass erase
(0x41). The command code is latched into the command buffer.
address and data information).
Do not program any byte in the FLASH more than once after a successful
erase operation. Reprogramming bits in a byte which is already
programmed is not allowed without first erasing the page in which the byte
resides or mass erasing the entire FLASH memory. Programming without
first erasing may disturb data stored in the FLASH.
Figure 4-2
MC9S08GT16A/GT8A Data Sheet, Rev. 1
is a flowchart for executing all of the commands except for
NOTE
Freescale Semiconductor
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