C8051F705-GM Silicon Laboratories Inc, C8051F705-GM Datasheet - Page 52

• Manufacturer Part Number: C8051F705-GM
• Description: IC 8051 MCU 15K FLASH 48-QFN
• Manufacturer: Silicon Laboratories Inc
• Series: C8051F70xr

Specifications of C8051F705-GM

• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 25MHz
• Connectivity: SMBus (2-Wire/I²C), SPI, UART/USART
• Peripherals: Cap Sense, POR, PWM, WDT
• Number Of I /o: 39
• Program Memory Size: 15KB (15K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 32 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-QFN
• Processor Series: C8051F7x
• Core: 8051
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: I2C, SMBus, SPI, UART
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 39
• Number Of Timers: 4
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: PK51, CA51, A51, ULINK2
• Development Tools By Supplier: C8051F700DK
• Minimum Operating Temperature: - 40 C
• Height: 0.95 mm
• Length: 7 mm
• Supply Voltage (max): 1.9 V, 3.6 V
• Supply Voltage (min): 1.7 V, 1.8 V
• Width: 7 mm
• For Use With: 336-1635 - DEV KIT FOR C8051F700
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Data Converters: -
• Lead Free Status / Rohs Status: Details
• Other names: 336-1612-5

C8051F70x/71x
Table 9.9. EEPROM Electrical Characteristics
V
Table 9.10. ADC0 Electrical Characteristics
V
52
Parameter
DC Accuracy
Resolution
Integral Nonlinearity
Differential Nonlinearity
Offset Error
Full Scale Error
Offset Temperature Coefficient
Dynamic performance (10 kHz sine-wave single-ended input, 1 dB below Full Scale, 500 ksps)
Signal-to-Noise Plus Distortion
Total Harmonic Distortion
Spurious-Free Dynamic Range
Conversion Rate
SAR Conversion Clock
Conversion Time in SAR Clocks
Track/Hold Acquisition Time
Throughput Rate
Analog Inputs
ADC Input Voltage Range
Sampling Capacitance
Input Multiplexer Impedance
Power Specifications
Power Supply Current
Power Supply Rejection
Parameter
Write to EEPROM from RAM
Read of EEPROM to RAM
Endurance (Writes)
Clock Speed During EEPROM
Write Operations
Note: T
DD
DD
= 1.8 to 3.6 V; T
= 3.0 V, VREF = 2.40 V (REFSL=0),
SYSCLK
is equal to one period of the device system clock (SYSCLK).
A
= –40 to +85 °C unless otherwise specified. Use factory-calibrated settings.
–
Operating Mode, 500 ksps
40 to +85 °C unless otherwise specified.
Guaranteed Monotonic
Up to the 5th harmonic
Conditions
V
10-bit Mode
V
Conditions
8-bit Mode
DD
0.5x Gain
DD
1x Gain
>= 2.0 V
Rev. 1.0
< 2.0 V
300000
Min
—
1
Min
300
2.0
–2
–2
56
13
11
—
—
—
—
—
—
—
—
—
—
—
—
0
50 x T
Typ
±0.5
±0.5
—
—
—
Typ
–75
600
–70
10
45
60
72
SYSCLK
—
—
—
—
—
—
—
0
0
5
3
5
VREF
1000
Max
8.33
500
±1
±1
—
—
—
—
—
—
—
—
—
—
—
—
2
2
Max
—
—
—
3
ppm/°C
clocks
clocks
Units
MHz
ksps
LSB
LSB
LSB
LSB
cycles
Units
bits
dB
dB
dB
k
µA
dB
ns
µs
pF
pF
MHz
V
ms
µs