ATTINY4-TSHR Atmel, ATTINY4-TSHR Datasheet - Page 113

• Manufacturer Part Number: ATTINY4-TSHR
• Description: IC MCU AVR 512B FLASH SOT-23-6
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY4-TSHR

• Package / Case: SOT-23-6
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Speed: 12MHz
• Number Of I /o: 4
• Core Processor: AVR
• Program Memory Type: FLASH
• Ram Size: 32 x 8
• Program Memory Size: 512B (512 x 8)
• Oscillator Type: Internal
• Peripherals: POR, PWM, WDT
• Core Size: 8-Bit
• Controller Family/series: ATtiny
• No. Of I/o's: 4
• Ram Memory Size: 32Byte
• Cpu Speed: 12MHz
• No. Of Timers: 1
• Rohs Compliant: Yes
• Processor Series: ATTINY4x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 32 B
• Interface Type: ISP
• Maximum Clock Frequency: 12 MHz
• Number Of Programmable I/os: 4
• Number Of Timers: 1
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
• Minimum Operating Temperature: - 40 C
• Package: 6SOT-23
• Device Core: AVR
• Family Name: ATtiny
• Maximum Speed: 12 MHz
• Operating Supply Voltage: 2.5|3.3|5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Connectivity: -
• Lead Free Status / Rohs Status: Details

15.4.2
15.4.3
15.4.3.1
8127D–AVR–02/10
Reading the Flash
Programming the Flash
Chip Erase
Figure 15-1. Addressing the Flash Memory
The Flash can be read from the data memory mapped locations one byte at a time. For read
operations, the least significant bit (bit 0) is used to select the low or high byte in the word
address. If this bit is zero, the low byte is read, and if it is one, the high byte is read.
The Flash can be written word-by-word. Before writing a Flash word, the Flash target location
must be erased. Writing to an un-erased Flash word will corrupt its content.
The Flash is word-accessed for writing, and the data space uses byte-addressing to access
Flash that has been mapped to data memory. It is therefore important to write the word in the
correct order to the Flash, namely low bytes before high bytes. First, the low byte is written to the
temporary buffer. Then, writing the high byte latches both the high byte and the low byte into the
Flash word buffer, starting the write operation to Flash.
The Flash erase operations can only performed for the entire Flash sections.
The Flash programming sequence is as follows:
The Chip Erase command will erase the entire code section of the Flash memory and the NVM
Lock Bits. For security reasons, the NVM Lock Bits are not reset before the code section has
been completely erased. Configuration, Signature and Calibration sections are not changed.
1. Perform a Flash section erase or perform a Chip erase
2. Write the Flash section word by word
ADDRESS POINTER
SECTIONEND
16
00
01
02
...
...
...
SECTION
FLASH
PAGE
PADDRMSB
WITHIN A FLASH
PAGE ADDRESS
SECTION
PADDR
PAGEEND
00
01
...
...
...
WADDRMSB+1
FLASH
WORD
PAGE
WADDRMSB
WADDR
ATtiny4/5/9/10
WORD ADDRESS
WITHIN A FLASH
PAGE
1
0/1
LOW/HIGH
BYTE SELECT
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