PIC16LF1827-I/SO Microchip Technology, PIC16LF1827-I/SO Datasheet - Page 116

• Manufacturer Part Number: PIC16LF1827-I/SO
• Description: IC MCU 8BIT 4KB FLASH 18SOIC
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 16Fr

Specifications of PIC16LF1827-I/SO

• Program Memory Type: FLASH
• Program Memory Size: 7KB (4K x 14)
• Package / Case: 18-SOIC (7.5mm Width)
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 32MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 16
• Eeprom Size: 256 x 8
• Ram Size: 384 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: PIC16LF
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 384 B
• Interface Type: I2C/SPI/UART
• Maximum Clock Frequency: 32 MHz
• Number Of Programmable I/os: 15
• Number Of Timers: 5
• Operating Supply Voltage: 1.8 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12-ch x 10-bit
• On-chip Dac: 5 bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PIC16F/LF1826/27
11.5
Depending on the application, good programming
practice may dictate that the value written to the data
EEPROM or program memory should be verified (see
Example 11-6) to the desired value to be written.
EXAMPLE 11-6:
11.5.1
The data EEPROM is a high-endurance, byte
addressable array that has been optimized for the
storage of frequently changing information (e.g.,
program variables or other data that are updated often).
When variables in one section change frequently, while
variables in another section do not change, it is possible
to exceed the total number of write cycles to the
EEPROM (specification D124) without exceeding the
total number of write cycles to a single byte
(specifications D120 and D120A). If this is the case,
then a refresh of the array must be performed. For this
reason, variables that change infrequently (such as
constants, IDs, calibration, etc.) should be stored in
Flash program memory.
TABLE 11-2:
DS41391B-page 116
EECON1
EECON2 EEPROM Control Register 2 (not a physical register)
EEADRL EEADRL7 EEADRL6 EEADRL5 EEADRL4 EEADRL3 EEADRL2 EEADRL1 EEADRL0
EEADRH
EEDATL
EEDATH
INTCON
PIE2
PIR2
Legend: — = unimplemented read as ‘0’. Shaded cells are not used by Data EEPROM module.
BANKSEL EEDATL
MOVF
BSF
XORWF
BTFSS
GOTO
:
Name
*
Write Verify
EEDATL, W
EECON1, RD ;YES, Read the
EEDATL, W
STATUS, Z
WRITE_ERR
Page provides register information.
USING THE DATA EEPROM
EEDATL7 EEDATL6 EEDATL5 EEDATL4 EEDATL3 EEDATL2 EEDALT1 EEDATL0
EEPGD
OSFIE
OSFIF
Bit 7
GIE
—
—
SUMMARY OF REGISTERS ASSOCIATED WITH DATA EEPROM
WRITE VERIFY
EEADRH6 EEADRH5 EEADRH4 EEADRH3 EEADRH2 EEADRH1 EEADRH0
;
;EEDATL not changed
;from previous write
;value written
;
;Is data the same
;No, handle error
;Yes, continue
CFGS
PEIE
C2IE
Bit 6
C2IF
—
EEDATH5 EEDATH4 EEDATH3 EEDATH2 EEDATH1 EEDATH0
TMR0IE
LWLO
Bit 5
C1IE
C1IF
FREE
Bit 4
INTE
EEIE
EEIF
Preliminary
WRERR
BCL1IE
BCL1IF
IOCIE
Bit 3
11.6
There are conditions when the user may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been built-in. On power-up, WREN is cleared. Also, the
Power-up
EEPROM write.
The write initiate sequence and the WREN bit together
help prevent an accidental write during:
• Brown-out
• Power Glitch
• Software Malfunction
11.7
Data memory can be code-protected by programming
the CPD bit in the Configuration Word 1 to ‘0’.
When the data memory is code-protected, only the
CPU is able to read and write data to the data
EEPROM. It is recommended to code-protect the
program memory when code-protecting data memory.
This prevents anyone from replacing your program with
a program that will access the contents of the data
EEPROM.
TMR0IF
WREN
Protection Against Spurious Write
Data EEPROM Operation During
Code-Protect
Bit 2
—
—
Timer
Bit 1
INTF
WR
(64 ms
—
—
© 2009 Microchip Technology Inc.
CCP2IE
CCP2IF
IOCIF
duration)
Bit 0
RD
Register
on Page
prevents
108*
107
106
106
106
106
89
91
95