C8051F333-GMR Silicon Laboratories Inc, C8051F333-GMR Datasheet - Page 101

• Manufacturer Part Number: C8051F333-GMR
• Description: IC 8051 MCU 4K FLASH 20MLP
• Manufacturer: Silicon Laboratories Inc
• Series: C8051F33xr

Specifications of C8051F333-GMR

• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 25MHz
• Connectivity: SMBus (2-Wire/I²C), SPI, UART/USART
• Peripherals: POR, PWM, WDT
• Number Of I /o: 17
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: FLASH
• Ram Size: 768 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-QFN
• Processor Series: C8051F3x
• Core: 8051
• Data Bus Width: 8 bit
• Data Ram Size: 768 B
• Interface Type: I2C, SPI, UART
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 17
• Number Of Timers: 4
• Operating Supply Voltage: 2.7 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: KSK-SL-TOOLSTICK, PK51, CA51, A51, ULINK2
• Development Tools By Supplier: C8051F330DK
• Minimum Operating Temperature: - 40 C
• For Use With: 336-1451 - ADAPTER PROGRAM TOOLSTICK F330
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Details

C8051F330/1/2/3/4/5
11.1.3. Flash Write Procedure
Flash bytes are programmed by software with the following sequence:
Steps 5–7 must be repeated for each byte to be written. After Flash writes are complete, PSWE should be
cleared so that MOVX instructions do not target program memory.
Table 11.1. Flash Electrical Characteristics
V
11.2. Non-volatile Data Storage
The Flash memory can be used for non-volatile data storage as well as program code. This allows data
such as calibration coefficients to be calculated and stored at run time. Data is written using the MOVX
write instruction and read using the MOVC instruction. Note: MOVX read instructions always target XRAM.
104
Flash Size
Endurance
Erase Cycle Time
Write Cycle Time
*Note: 512 bytes at addresses 0x1E00 to 0x1FFF are reserved.
DD
= 2.7 to 3.6 V;
Parameter
Step 1. Disable interrupts (recommended).
Step 2. Erase the 512-byte Flash page containing the target location, as described in
Step 3. Set the PSWE bit (register PSCTL).
Step 4. Clear the PSEE bit (register PSCTL).
Step 5. Write the first key code to FLKEY: 0xA5.
Step 6. Write the second key code to FLKEY: 0xF1.
Step 7. Using the MOVX instruction, write a single data byte to the desired location within the 512-
Step 8. Clear the PSWE bit.
11.1.2
byte sector.
–
40 to +85 ºC unless otherwise specified.
.
C8051F330/1
C8051F332/3
C8051F334/5
25 MHz System Clock
25 MHz System Clock
Conditions
Rev. 1.7
8192
4096
2048
20 k
Min
10
40
*
100 k
Typ
15
55
—
—
—
Max
20
70
—
—
—
—
Erase/Write
Section
Units
bytes
ms
µs