TMP86FH46ANG(Z) Toshiba, TMP86FH46ANG(Z) Datasheet - Page 209
TMP86FH46ANG(Z)
Manufacturer Part Number
TMP86FH46ANG(Z)
Description
IC MCU 8BIT FLASH 16KB 42-SDIP
Manufacturer
Toshiba
Series
TLCS-870/Cr
Datasheet
1.TMP86FH46ANGZ.pdf
(214 pages)
Specifications of TMP86FH46ANG(Z)
Core Processor
870/C
Core Size
8-Bit
Speed
16MHz
Connectivity
SIO, UART/USART
Peripherals
LED, PWM, WDT
Number Of I /o
33
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
42-SDIP (0.600", 15.24mm)
Processor Series
TLCS-870
Core
870/C
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
SIO, UART
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
33
Number Of Timers
3
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
Development Tools By Supplier
BMSKTOPAS86FH47(AND), BM1040R0A, BMP86A100010A, BMP86A100010B, BMP86A200010B, BMP86A200020A, BMP86A300010A, BMP86A300020A, BMP86A300030A, SW89CN0-ZCC, SW00MN0-ZCC
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
For Use With
BM1401W0A-G - FLASH WRITER ON-BOARD PROGRAMTMP86C909XB - EMULATION CHIP FOR TMP86F SDIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Other names
TMP86FH46ANGZ
- Current page: 209 of 214
- Download datasheet (3Mb)
17.7 Recommended Oscillating Conditions
17.8 Handling Precaution
Note 1: To ensure stable oscillation, the resonator position, load capacitance, etc. must be appropriate. Because these factors are
Note 2: When using the device (oscillator) in places exposed to high electric fields such as cathode-ray tubes, we recommend
Note 3: The product numbers and specifications of the resonators by Murata Manufacturing Co., Ltd. are subject to change. For
- The solderability test conditions for lead-free products (indicated by the suffix G in product name) are shown
-
below.
1. When using the Sn-37Pb solder bath
2. When using the Sn-3.0Ag-0.5Cu solder bath
When using the device (oscillator) in places exposed to high electric fields such as cathode-ray tubes, we recommend elec-
trically shielding the package in order to maintain normal operating condition.
greatly affected by board patterns, please be sure to evaluate operation on the board on which the device will actually be
mounted.
electrically shielding the package in order to maintain normal operating condition.
up-to-date information, please refer to the following URL:
http://www.murata.com
Note:
Solder bath temperature = 230 °C
Dipping time = 5 seconds
Number of times = once
R-type flux used
Solder bath temperature = 245 °C
Dipping time = 5 seconds
Number of times = once
R-type flux used
The pass criteron of the above test is as follows:
C
(1) High-frequency Oscillation
1
XIN
Solderability rate until forming ≥ 95 %
XOUT
C
2
Page 195
C
(2) Low-frequency Oscillation
1
XTIN
XTOUT
C
2
TMP86FH46ANG
Related parts for TMP86FH46ANG(Z)
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet: