HD64F3642AH Renesas Electronics America, HD64F3642AH Datasheet - Page 165

IC H8 MCU FLASH 16K 64QFP

HD64F3642AH

Manufacturer Part Number
HD64F3642AH
Description
IC H8 MCU FLASH 16K 64QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Lr
Datasheet

Specifications of HD64F3642AH

Core Processor
H8/300L
Core Size
8-Bit
Speed
8MHz
Connectivity
SCI
Peripherals
PWM, WDT
Number Of I /o
53
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
64-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F3642AH
Manufacturer:
HITACHI
Quantity:
12
Part Number:
HD64F3642AH
Manufacturer:
HITACHI
Quantity:
648
Part Number:
HD64F3642AH
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
HD64F3642AHV
Manufacturer:
RENESAS
Quantity:
1 000
Part Number:
HD64F3642AHV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
HD64F3642AHV H8/3642A
Manufacturer:
RENESAS
Quantity:
190
LOOPE:
;
EVR:
LOOPEV: DEC
EBRTST: CMP.B #H'0C,
EBR2EV: BTST
ADD01:
ERASE1: BRA
ERSEVF: MOV.W @R2+,
Execute erase-verify
MOV.W #H'e5A,
MOV.B R4L,
MOV.B R4H,
MOV.B #H'36,
MOV.B R4L,
MOV.W R5,
BSET
NOP
NOP
NOP
NOP
SUBS
MOV.W R4,
BNE
BCLR
MOV.B #H'50,
MOV.B R4L,
MOV.W #RAMSTR, R2
MOV.W #ERVADR, R3
ADD.W R3,
MOV.W #START,
SUB.W R3,
MOV.B #H'00,
MOV.B #H'b,
BSET
BNE
BEQ
CMP.B #H'08,
BMI
MOV.B R1L,
SUBX
BTST
BNE
BRA
BNE
INC
MOV.W @R2+,
BRA
#1,
#1,
LOOPE
#1,
#3,
R4H
LOOPEV
HANTEI
EBR2EV
#H'08,
R1H,
ERSEVF
ADD01
R1L,
ERSEVF
R1L
EBRTST
ERASE
R4
@TCSRW:8 ;
@TCW:8
R4L
@TCSRW:8 ;
R4
@FLMCR:8 ;
R4
R4
@FLMCR:8 ;
R4L
@TCSRW:8 ;
R2
R3
R2
R1L
R4H
@FLMCR:8 ;
R1L
R1L
R1H
R1H
R0H
R0L
R3
R3
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
Start watchdog timer
Set erase loop counter
Set E bit
Wait loop
Clear E bit
Stop watchdog timer
Transfer destination start address (RAM)
#RAMSTR + #ERVADR
Address of data area used in RAM
Used to test bit R1L in R0
Set erase-verify loop counter
Set EV bit
Wait loop
R1L = H'0C?
If finished checking all R0 bits, branch to HANTEI
If R1L ≥ 8, EBR1 test; if R1L < 8, EBR2 test
R1L – 8
Test bit R1H in EBR1 (R0H)
If bit R1H in EBR1 (R0H) is 1, branch to ERSEVF
If bit R1H in EBR1 (R0H) is 0, branch to ADD01
Test bit R1L in EBR2 (R0L)
If bit R1L in EBR2 (R0L) is 1, branch to ERSEVF
R1L + 1
Dummy-increment R2
Branch to ERASE via ERASE1
Start address of block to be erase-verified
Rev. 6.00 Sep 12, 2006 page 143 of 526
R1H
R1L
R2
REJ09B0326-0600
Section 6 ROM

Related parts for HD64F3642AH