DF2378RVFQ34WV Renesas Electronics America, DF2378RVFQ34WV Datasheet - Page 330

MCU 3V 512K I-TEMP PB-FREE 144-L

DF2378RVFQ34WV

Manufacturer Part Number
DF2378RVFQ34WV
Description
MCU 3V 512K I-TEMP PB-FREE 144-L
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2378RVFQ34WV

Core Processor
H8S/2000
Core Size
16-Bit
Speed
34MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
For Use With
YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK2378 - DEV EVAL KIT FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Section 6 Bus Controller (BSC)
Rev.7.00 Mar. 18, 2009 page 262 of 1136
REJ09B0109-0700
Figure 6.79 Example of Idle Cycle Operation after Continuous Synchronous DRAM Space
Precharge-sel
DQMU, DQML
Address bus
not inserted after continuous synchronous DRAM space read access even if bits ICIS1 and
ICIS0 are set to 1.
Data bus
CKE
CAS
RAS
WE
RD
Read Access (Read between Different Area) (IDLC = 0, CAS Latency 2)
φ
PALL ACTV READ
address
Column
T
p
Continuous synchronous
DRAM space read
address
address
Row
Row
T
r
T
Column address 1
c1
T
cl
T
c2
Idle cycle
High
T
i
External space read
External address
External address
T
1
NOP
T
2
T
3
Continuous synchronous
DRAM space read
T
i
Column address 2
T
c1
READ
T
Cl
NOP
T
c2

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