SAF-TC1167-128F133HL AD Infineon Technologies, SAF-TC1167-128F133HL AD Datasheet - Page 31
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SAF-TC1167-128F133HL AD
Manufacturer Part Number
SAF-TC1167-128F133HL AD
Description
IC MCU 32BIT FLASH 176-LQFP
Manufacturer
Infineon Technologies
Series
TC116xr
Specifications of SAF-TC1167-128F133HL AD
Core Processor
TriCore
Core Size
32-Bit
Speed
133MHz
Connectivity
ASC, CAN, EBI/EMI, MLI, MSC, SSC
Peripherals
DMA, POR, WDT
Number Of I /o
88
Program Memory Size
1MB (1M x 8)
Program Memory Type
FLASH
Ram Size
128K x 8
Voltage - Supply (vcc/vdd)
1.42 V ~ 1.58 V
Data Converters
A/D 32x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
176-LFQFP
Data Bus Width
32 bit
Data Ram Size
104 KB
Interface Type
ASC, MLI, MSC, SSC
Maximum Clock Frequency
133 MHz
Number Of Programmable I/os
88
Number Of Timers
3
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
2 (12 bit, 16 Channel) / 10 bit, 4 Channel
Packages
PG-LQFP-176
Max Clock Frequency
133.0 MHz
Sram (incl. Cache)
128.0 KByte
Can Nodes
2
A / D Input Lines (incl. Fadc)
36
Program Memory
1.0 MB
For Use With
B158-H8690-X-0-7600IN - KIT STARTER TC116X SERIES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Other names
SP000602800
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Data Flash Features and Functions
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Data Sheet
For further operating conditions see data sheet section “Flash Memory Parameters”.
64 Kbyte on-chip Flash, configured in two independent Flash banks of equal size.
64 bit read interface.
Erase/program one bank while data read access from the other bank.
Programming one bank while erasing the other bank using an automatic
suspend/resume function.
Dynamic correction of single-bit errors during read access.
Sector architecture:
– Two sectors of equal size.
– Each sector separately erasable.
128 byte pages to be written in one step.
Operational control per command sequences (unlock sequences, same as those of
Program Flash) for protection against unintended operation.
End-of-busy as well as error reporting with interrupt and bus error trap.
Write state machine for automatic program and erase.
Margin check for detection of problematic Flash bits.
Endurance = 30000 (can be device dependent); i.e. 30000 program/erase cycles per
sector are allowed, with a retention of min. 5 years.
Dedicated DFlash status information.
Other characteristics: Same as Program Flash.
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Introduction
V1.3, 2009-10
TC1167