SAF-TC1167-128F133HL AD Infineon Technologies, SAF-TC1167-128F133HL AD Datasheet - Page 31

• Manufacturer Part Number: SAF-TC1167-128F133HL AD
• Description: IC MCU 32BIT FLASH 176-LQFP
• Manufacturer: Infineon Technologies
• Series: TC116xr

Specifications of SAF-TC1167-128F133HL AD

• Core Processor: TriCore
• Core Size: 32-Bit
• Speed: 133MHz
• Connectivity: ASC, CAN, EBI/EMI, MLI, MSC, SSC
• Peripherals: DMA, POR, WDT
• Number Of I /o: 88
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• Ram Size: 128K x 8
• Voltage - Supply (vcc/vdd): 1.42 V ~ 1.58 V
• Data Converters: A/D 32x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 176-LFQFP
• Data Bus Width: 32 bit
• Data Ram Size: 104 KB
• Interface Type: ASC, MLI, MSC, SSC
• Maximum Clock Frequency: 133 MHz
• Number Of Programmable I/os: 88
• Number Of Timers: 3
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 2 (12 bit, 16 Channel) / 10 bit, 4 Channel
• Packages: PG-LQFP-176
• Max Clock Frequency: 133.0 MHz
• Sram (incl. Cache): 128.0 KByte
• Can Nodes: 2
• A / D Input Lines (incl. Fadc): 36
• Program Memory: 1.0 MB
• For Use With: B158-H8690-X-0-7600IN - KIT STARTER TC116X SERIES
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details
• Other names: SP000602800

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Data Flash Features and Functions
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Data Sheet
For further operating conditions see data sheet section “Flash Memory Parameters”.
64 Kbyte on-chip Flash, configured in two independent Flash banks of equal size.
64 bit read interface.
Erase/program one bank while data read access from the other bank.
Programming one bank while erasing the other bank using an automatic
suspend/resume function.
Dynamic correction of single-bit errors during read access.
Sector architecture:
– Two sectors of equal size.
– Each sector separately erasable.
128 byte pages to be written in one step.
Operational control per command sequences (unlock sequences, same as those of
Program Flash) for protection against unintended operation.
End-of-busy as well as error reporting with interrupt and bus error trap.
Write state machine for automatic program and erase.
Margin check for detection of problematic Flash bits.
Endurance = 30000 (can be device dependent); i.e. 30000 program/erase cycles per
sector are allowed, with a retention of min. 5 years.
Dedicated DFlash status information.
Other characteristics: Same as Program Flash.
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Introduction
V1.3, 2009-10
TC1167