MC68HC908AS60CFN Freescale Semiconductor, MC68HC908AS60CFN Datasheet - Page 69
MC68HC908AS60CFN
Manufacturer Part Number
MC68HC908AS60CFN
Description
IC MCU 60K FLASH 8MHZ 52-PLCC
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC68HC908AS60CFN.pdf
(454 pages)
Specifications of MC68HC908AS60CFN
Core Processor
HC08
Core Size
8-Bit
Speed
8.4MHz
Connectivity
SCI, SPI
Peripherals
LVD, POR, PWM
Number Of I /o
40
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 15x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
52-PLCC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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MC68HC908AS60 — Rev. 1.0
NOTE:
ordinary read mode except that a built-in counter stretches the data
access for an additional eight cycles to allow sensing of the lower cell
current. Margin read mode imposes a more stringent read condition on
the bitcell to ensure the bitcell is programmed with enough margin for
long-term data retention. During these eight cycles, the COP counter
continues to run. The user must account for these extra cycles within
COP feed loops. A margin read cycle can only follow a page
programming operation.
To program and margin read the FLASH memory, use this step-by-step
algorithm. See
of the times used in this algorithm.
While these operations must be performed in the order shown, other
unrelated operations may occur between the steps.
10. Clear the PGM bit.
11. Wait for a time, t
12. Read back data in margin read mode. This is done in eight
13. Clear the MARGIN bit.
1. Set the PGM bit. This configures the memory for program
2. Read from the block protect register (FLBPR1).
3. Write data to the eight bytes of the page being programmed. This
4. Set the HVEN bit.
5. Wait for a time, t
6. Clear the HVEN bit.
7. Wait for a time, t
8. Set the MARGIN bit.
9. Wait for a time, t
Freescale Semiconductor, Inc.
For More Information On This Product,
operation and enables the latching of address and data for
programming.
requires eight separate write operations.
separate read operations which are each stretched by eight
cycles.
Go to: www.freescale.com
24.13 Memory Characteristics
FLASH-1 Memory
PROG
HVTV
VTP
HVD
.
.
.
.
FLASH Program/Margin Read Operation
for a detailed description
FLASH-1 Memory
Technical Data
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