MC912DT128ACPV Freescale Semiconductor, MC912DT128ACPV Datasheet - Page 124
MC912DT128ACPV
Manufacturer Part Number
MC912DT128ACPV
Description
IC 8MHZ 16 BIT MICROCONTROLLER
Manufacturer
Freescale Semiconductor
Series
HC12r
Datasheet
1.MC912DG128ACPVER.pdf
(478 pages)
Specifications of MC912DT128ACPV
Core Processor
CPU12
Core Size
16-Bit
Speed
8MHz
Connectivity
CAN, I²C, SCI, SPI
Peripherals
POR, PWM, WDT
Number Of I /o
67
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 16x8/10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
112-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
KMC912DT128ACPV
Q1195202
Q1195202
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EEPROM Memory
9.3 EEPROM Selective Write More Zeros
Technical Data
124
The EEPROM can be programmed such that one or multiple bits are
programmed (written to a logic “0”) at a time. However, the user should
never program any bit more than once before erasing the entire byte. In
other words, the user is not allowed to over write a logic “0” with another
“0’.
For some applications it may be advantageous to track more than 10k
events with a single byte of EEPROM by programming one bit at a time.
For that purpose, a special selective bit programming technique is
available. An example is shown here.
Original state of byte = binary 1111:1111 (erased)
First event is recorded by programming bit position 0
Program write = binary 1111:1110;
Second event is recorded by programming bit position 1
Program write = binary 1111:1101;
Third event is recorded by programming bit position 2
Program write = binary 1111:1011;
Fourth event is recorded by programming bit position 3
Program write = binary 1111:0111;
Events five through eight are recorded in a similar fashion.
Note that none of the bit locations are actually programmed more than
once although the byte was programmed eight times.
When this technique is utilized, a program / erase cycle is defined as
multiple writes (up to eight) to a unique location followed by a single
erase sequence.
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
EEPROM Memory
Result = binary 1111:1110
Result = binary 1111:1100
Result = binary 1111:1000
Result = binary 1111:0000
MC68HC912DT128A — Rev 4.0
MOTOROLA
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