FDMS7602S Fairchild Semiconductor, FDMS7602S Datasheet - Page 10
![MOSFET N-CH 30V DUAL POWER56](/photos/13/92/139233/fdms7602s_sml.jpg)
FDMS7602S
Manufacturer Part Number
FDMS7602S
Description
MOSFET N-CH 30V DUAL POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDMS7602S.pdf
(12 pages)
Specifications of FDMS7602S
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A, 17A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
28nC @ 10V
Input Capacitance (ciss) @ Vds
1750pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
*
Module Configuration
Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
30A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.006ohm
Rds(on) Test Voltage Vgs
10V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS7602STR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDMS7602S
Manufacturer:
FSC
Quantity:
2 100
©2010 Fairchild Semiconductor Corporation
FDMS7602S Rev.C1
Typical Characteristics
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 25 shows the reverse recovery
characteristic of the FDMS7602S.
20
15
10
-5
5
0
diode reverse recovery characteristic
0
Figure 2 5 . FDMS7602S SyncFET body
50
TIME (ns)
di/dt = 300 A/
100
(continued)
μ
s
150
200
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10000
1000
100
Figure 2 6 . SyncFET body diode reverse
leakage versus drain-source voltage
10
1
0
5
V
DS
10
, REVERSE VOLTAGE (V)
T
T
J
T
J
= 100
J
= 125
= 25
15
o
o
o
C
C
C
20
www.fairchildsemi.com
25
30