FDMS7602S Fairchild Semiconductor, FDMS7602S Datasheet - Page 4
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FDMS7602S
Manufacturer Part Number
FDMS7602S
Description
MOSFET N-CH 30V DUAL POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDMS7602S.pdf
(12 pages)
Specifications of FDMS7602S
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A, 17A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
28nC @ 10V
Input Capacitance (ciss) @ Vds
1750pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
*
Module Configuration
Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
30A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.006ohm
Rds(on) Test Voltage Vgs
10V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS7602STR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDMS7602S
Manufacturer:
FSC
Quantity:
2 100
©2010 Fairchild Semiconductor Corporation
FDMS7602S Rev.C1
Typical Characteristics (Q1 N-Channel)
1.6
1.4
1.2
1.0
0.8
40
30
20
10
40
30
20
10
Figure 3. Normalized On Resistance
0
0
-75
0.0
Figure 1. On Region Characteristics
1.5
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
I
V
D
-50
GS
= 12 A
V
vs Junction Temperature
DS
= 10 V
V
GS
T
2.0
= 5 V
V
V
-25
J
V
DS
GS
= 3.5 V
,
GS
0.5
JUNCTION TEMPERATURE (
V
, GATE TO SOURCE VOLTAGE (V)
,
GS
DRAIN TO SOURCE VOLTAGE (V)
= 4 V
V
0
GS
= 4.5 V
T
T
J
V
J
GS
= 25
2.5
= 6 V
= 150
25
= 10 V
μ
o
s
1.0
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
C
50
3.0
75
1.5
o
100 125 150
C )
T
3.5
J
= -55
μ
o
s
C
2.0
4.0
T
J
= 25°C unless otherwise noted
0.001
0.01
0.1
40
30
20
10
40
10
Figure 2. Normalized On-Resistance
0
1
4
3
2
1
0
Figure 4. On-Resistance vs Gate to
0.0
Forward Voltage vs Source Current
2
0
vs Drain Current and Gate Voltage
Figure 6. Source to Drain Diode
V
GS
= 0 V
V
0.2
SD
T
, BODY DIODE FORWARD VOLTAGE (V)
V
J
V
GS
= 150
GS
10
I
Source Voltage
4
D
,
,
T
GATE TO SOURCE VOLTAGE (V)
T
= 3.5 V
DRAIN CURRENT (A)
J
J
0.4
o
= 25
= 125
C
o
C
o
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
C
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
0.6
20
6
= 4 V
V
I
GS
D
= 12 A
= 6 V
0.8
T
J
= -55
V
30
8
T
GS
J
www.fairchildsemi.com
V
= 25
= 4.5 V
1.0
GS
o
C
μ
= 10 V
s
μ
o
s
C
1.2
10
40