FDMS7602S Fairchild Semiconductor, FDMS7602S Datasheet - Page 3

• Manufacturer Part Number: FDMS7602S
• Description: MOSFET N-CH 30V DUAL POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS7602S

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A, 17A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1750pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.006ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS7602STR

©2010 Fairchild Semiconductor Corporation
FDMS7602S Rev.C1
Notes:
1: R
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3: As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
Electrical Characteristics
Drain-Source Diode Characteristics
V
t
Q
rr
SD
rr
by the user's board design.
Symbol
θJA
is determined with the device mounted on a 1 in
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
a. 57 °C/W when mounted on
c. 125 °C/W when mounted on a
a 1 in
minimum pad of 2 oz copper
2
pad of 2 oz copper
T
2
J
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
= 25 °C unless otherwise noted
V
V
Q1
I
Q2
I
F
F
GS
GS
= 12 A, di/dt = 100 A/μs
= 17 A, di/dt = 300 A/μs
= 0 V, I
= 0 V, I
Test Conditions
S
S
= 12 A
= 17 A
(Note 2)
(Note 2)
d. 120 °C/W when mounted on a
b. 50 °C/W when mounted on
minimum pad of 2 oz copper
a 1 in
θJC
Type
Q1
Q2
Q1
Q2
Q1
Q2
is guaranteed by design while R
2
pad of 2 oz copper
Min
Typ
0.8
0.8
27
29
10
31
www.fairchildsemi.com
Max
1.2
1.2
43
46
18
50
θCA
is determined
Units
nC
ns
V