SI8465DB-T2-E1 Vishay, SI8465DB-T2-E1 Datasheet - Page 2

• Manufacturer Part Number: SI8465DB-T2-E1
• Description: MOSFET P-CH D-S 20V MICROFOOT
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8465DB-T2-E1

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 104 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 10V
• Power - Max: 780mW
• Mounting Type: Surface Mount
• Package / Case: 4-MICRO FOOT®CSP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3.8A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 104mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1.5V
• Resistance Drain-source Rds (on): 0.122 Ohms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 3.8 A
• Power Dissipation: 1.8 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Details
• Other names: SI8465DB-T2-E1TR

Si8465DB
Vishay Siliconix
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper.
b. Maximum under steady state conditions is 100 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper.
d. Maximum under steady state conditions is 190 °C/W.
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
J
a, b
c, d
= 25 °C, unless otherwise noted
a
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
t
t
C
I
I
V
GS(th)
D(on)
DS(on)
C
C
Q
V
Q
d(on)
d(off)
d(on)
d(off)
GSS
I
DSS
Q
DS
g
Q
R
I
SM
t
t
t
oss
t
t
t
t
DS
rss
SD
iss
S
rr
fs
gs
gd
a
b
r
f
r
f
rr
g
g
/T
/T
J
J
I
F
V
V
V
I
V
I
D
DS
= - 1 A, dI/dt = 100 A/µs, T
D
DS
DS
DS
t = 10 s
t = 10 s
≅ - 1 A, V
≅ - 1 A, V
= - 10 V, V
= - 10 V, V
= - 20 V, V
V
V
V
V
= - 10 V, V
V
V
V
V
V
V
V
DS
GS
GS
DS
DS
GS
DS
GS
DD
DD
DS
I
S
Test Conditions
≤ - 5 V, V
= V
= - 4.5 V, I
= - 2.5 V, I
= - 10 V, I
= - 1 A, V
= 0 V, I
= 0 V, V
= - 20 V, V
= - 0.1 V, f = 1 MHz
= - 10 V, R
= - 10 V, R
I
D
GEN
GEN
T
GS
= - 250 µA
A
GS
GS
GS
= 25 °C
GS
, I
= - 4.5 V, R
= - 10 V, R
D
D
= - 10 V, I
GS
= - 4.5 V, I
= 0 V, T
GS
= 0 V, f = 1 MHz
= - 250 µA
Symbol
GS
= - 250 µA
D
D
D
R
GS
L
L
= ± 12 V
= - 1.5 A
= - 4.5 V
= - 1.5 A
= - 1.5 A
thJA
= 0 V
= 10 Ω
= 10 Ω
= 0 V
J
D
= 70 °C
J
g
g
D
= 25 °C
= - 1 A
= 1 Ω
= 1 Ω
= 1 A
Typical
125
55
Min.
- 0.6
- 20
- 10
0.086
0.122
Maximum
Typ.
0.85
- 0.8
- 12
450
125
2.8
2.2
7.5
95
12
20
20
25
10
10
25
10
20
10
10
10
7
6
7
S09-1922-Rev. A, 28-Sep-09
160
70
Document Number: 65363
± 100
0.104
0.148
Max.
- 1.5
- 1.5
- 1.2
- 10
- 15
- 1
18
30
30
40
15
15
15
40
15
40
20
9
°C/W
Unit
mV/°C
Unit
nC
nC
nA
µA
pF
ns
ns
ns
Ω
Ω
V
V
A
S
A
V