SI8465DB-T2-E1 Vishay, SI8465DB-T2-E1 Datasheet - Page 5

• Manufacturer Part Number: SI8465DB-T2-E1
• Description: MOSFET P-CH D-S 20V MICROFOOT
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8465DB-T2-E1

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 104 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 10V
• Power - Max: 780mW
• Mounting Type: Surface Mount
• Package / Case: 4-MICRO FOOT®CSP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3.8A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 104mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1.5V
• Resistance Drain-source Rds (on): 0.122 Ohms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 3.8 A
• Power Dissipation: 1.8 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Details
• Other names: SI8465DB-T2-E1TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Note:
When Mounted on 1" x 1" FR4 with Full Copper.
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65363
S09-1922-Rev. A, 28-Sep-09
4
3
2
1
0
0
25
D
T
A
is based on T
Current Derating*
- Ambient Temperature (°C)
50
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
1.5
1.2
0.9
0.6
0.3
0.0
25
50
T
A
- Ambient Temperature (°C)
Power Derating
75
Vishay Siliconix
100
Si8465DB
www.vishay.com
125
150
5