SI8465DB-T2-E1 Vishay, SI8465DB-T2-E1 Datasheet - Page 8

• Manufacturer Part Number: SI8465DB-T2-E1
• Description: MOSFET P-CH D-S 20V MICROFOOT
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8465DB-T2-E1

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 104 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 10V
• Power - Max: 780mW
• Mounting Type: Surface Mount
• Package / Case: 4-MICRO FOOT®CSP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3.8A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 104mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1.5V
• Resistance Drain-source Rds (on): 0.122 Ohms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 3.8 A
• Power Dissipation: 1.8 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Details
• Other names: SI8465DB-T2-E1TR

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All product specifications and data are subject to change without notice.
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or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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Document Number: 91000
www.vishay.com
Revision: 18-Jul-08
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