STP4N62K3 STMicroelectronics, STP4N62K3 Datasheet - Page 11
![MOSFET N-CH 620V 3.8A TO-220](/photos/29/5/290504/to-220_sml.jpg)
STP4N62K3
Manufacturer Part Number
STP4N62K3
Description
MOSFET N-CH 620V 3.8A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Specifications of STP4N62K3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.95 Ohm @ 1.9A, 10V
Drain To Source Voltage (vdss)
620V
Current - Continuous Drain (id) @ 25° C
3.8A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
450pF @ 50V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.95 Ohms
Drain-source Breakdown Voltage
620 V
Gate-source Breakdown Voltage
3 V
Continuous Drain Current
3.8 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
14 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10651-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP4N62K3
Manufacturer:
STMicroelectronics
Quantity:
800
STF/I/P/U4N62K3
Table 9.
Figure 25. TO-220FP drawing
Dim.
Dia
G1
F1
F2
L2
L3
L4
L5
L6
L7
G
A
B
D
E
F
H
TO-220FP mechanical data
A
B
H
Min.
0.45
0.75
1.15
1.15
4.95
28.6
15.9
4.4
2.5
2.5
2.4
9.8
2.9
10
9
3
Dia
Doc ID 17548 Rev 2
L6
L2
L7
L3
Typ.
mm
L5
16
F1
D
L4
F2
Package mechanical data
F
E
G1
Max.
2.75
1.70
1.70
10.4
30.6
10.6
16.4
4.6
2.7
0.7
5.2
2.7
3.6
9.3
3.2
1
7012510_Rev_K
G
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