STP4N62K3 STMicroelectronics, STP4N62K3 Datasheet - Page 8

• Manufacturer Part Number: STP4N62K3
• Description: MOSFET N-CH 620V 3.8A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STP4N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.95 Ohm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.95 Ohms
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: 3 V
• Continuous Drain Current: 3.8 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10651-5

Electrical characteristics
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Figure 14. Normalized gate threshold voltage
Figure 16. Maximum avalanche energy vs
Figure 18. Source-drain diode forward
V
V
GS(th)
SD
1.00
0.80
(norm)
1.10
0.70
0.90
(mJ)
E
0.3
0.9
0.6
0.2
120
110
100
1.0
0.8
0.7
0.5
0.4
(V)
0.1
AS
30
20
-75
40
10
90
80
70
60
50
0
0
0
vs temperature
starting Tj
characteristics
T
T
J
J
20
=150°C
=-50°C
1
-25
40
2
25
60
3
80
V
I
75
D
DD
=3.8 A
=50 V
100
4
125
120 140
T
5
J
=25°C
I
SD
Doc ID 17548 Rev 2
AM07181v1
AM07184v1
AM08888v1
T
(A)
J
T
(°C)
J
(°C)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
(norm)
(norm)
R
BV
DS(on)
1.10
1.00
0.95
1.05
0.90
1.0
DSS
0.5
1.5
2.5
2.0
-75
-75
temperature
-25
-25
25
25
VDSS
75
75
vs temperature
STF/I/P/U4N62K3
125
125
T
T
AM07182v1
AM07183v1
J
J
(°C)
(°C)