STP4N62K3 STMicroelectronics, STP4N62K3 Datasheet - Page 14

• Manufacturer Part Number: STP4N62K3
• Description: MOSFET N-CH 620V 3.8A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STP4N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.95 Ohm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.95 Ohms
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: 3 V
• Continuous Drain Current: 3.8 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10651-5

Package mechanical data
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Table 11.
Dim.
L20
L30
∅
D1
H1
b1
e1
L1
J1
Q
A
D
E
F
b
c
e
L
P
TO-220 type A mechanical data
15.25
Min.
4.40
0.61
1.14
0.48
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
10
13
Doc ID 17548 Rev 2
16.40
28.90
Typ.
1.27
mm
STF/I/P/U4N62K3
15.75
10.40
Max.
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
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