STP4N62K3 STMicroelectronics, STP4N62K3 Datasheet - Page 16

• Manufacturer Part Number: STP4N62K3
• Description: MOSFET N-CH 620V 3.8A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STP4N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.95 Ohm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.95 Ohms
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: 3 V
• Continuous Drain Current: 3.8 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10651-5

Package mechanical data
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Table 12.
Figure 28. I²PAK (TO-262) drawing
DIM.
A1
b1
e1
L1
L2
c2
D
A
E
b
c
e
L
I²PAK (TO-262) mechanical data
min.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
3.50
1.27
10
13
Doc ID 17548 Rev 2
mm.
typ
STF/I/P/U4N62K3
10.40
max.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
3.93
1.40
14
0004982_Rev_H